Analysis of efficiently poled electro-optic polymer/Tio2 vertical slot waveguide modulators

Enami, Yasufumi; Nakamura, Haruo; Luo, Jingdong; Jen, Alex K.‐Y.

doi:10.1016/j.optcom.2015.08.048

Cited by 17 publications

(8 citation statements)

References 19 publications

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“…While the measured device performance is not influenced, calculated values such as the EO coefficient have been adapted. Compared to [39], the second-order nonlinearity slightly increases to ( ) Comparing the EO coefficient of the investigated materials JRD1 and DLD164 to reported values of the independent studies (Refs [34,[43][44][45][46][47][48][49][50][51][52][53][54][55].) indicates a similar slot-width dependent EO coefficient in other materials and material composites.…”

Section: State-of-the-art Organic Electro-optic Materials In Nanophotmentioning

confidence: 66%

“…Yet, most commonly used materials are based on guest-host polymer systems. These include AJCKL1/APC [45] and commercially-available materials such as GigOptix M3 [46][47][48][49][50], Soluxra SEO100 [52,54,55], and Soluxra SEO125 [51][52][53]. For all reviewed materials a strong slot-width dependence of the EO coefficient is found.…”

Section: State-of-the-art Organic Electro-optic Materials In Nanophotmentioning

confidence: 99%

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Nonlinearities of organic electro-optic materials in nanoscale slots and implications for the optimum modulator design

et al. 2017

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The performance of highly nonlinear organic electro-optic (EO) materials incorporated into nanoscale slots is examined. It is shown that EO coefficients as large as 190 pm/V can be obtained in 150 nm wide plasmonic slot waveguides but that the coefficients decrease for narrower slots. Possible mechanism that lead to such a decrease are discussed. Monte-Carlo computer simulations are performed, confirming that chromophore-surface interactions are one important factor influencing the EO coefficient in narrow plasmonic slots. These highly nonlinear materials are of particular interest for applications in optical modulators. However, in modulators the key parameters are the voltage-length product U_πL and the insertion loss rather than the linear EO coefficients. We show record-low voltage-length products of 70 Vµm and 50 Vµm for slot widths in the order of 50 nm for the materials JRD1 and DLD164, respectively. This is because the nonlinear interaction is enhanced in narrow slot and thereby compensates for the reduced EO coefficient. Likewise, it is found that lowest insertion losses are observed for slot widths in the range 60 to 100 nm.

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Section: State-of-the-art Organic Electro-optic Materials In Nanophotmentioning

confidence: 66%

Section: State-of-the-art Organic Electro-optic Materials In Nanophotmentioning

confidence: 99%

Nonlinearities of organic electro-optic materials in nanoscale slots and implications for the optimum modulator design

et al. 2017

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“…The electro-optic figure of merit we take for this work is composed of the two competing quantities of interest for device design: the half-wave voltage and the signal loss. The electro-optic figure of merit is inversely proportional to the product of the half-wave voltage V π and the total linear loss Λ over the length of the device [7,8]. In a molecular material, these bulk properties are proportional to the molecular responses, so the bulk device figure of merit is ultimately limited by the quantum properties of the constituent molecules.…”

Section: Introductionmentioning

confidence: 99%

Fundamental limits on the electro-optic device figure of merit

2016

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Device figures of merit are commonly employed to assess bulk material properties for a particular device class, yet these properties ultimately originate in the linear and nonlinear susceptibilities of the material which are not independent of each other. In this work, we calculate the electro-optic device figure of merit based on the half-wave voltage and linear loss, which is important for phase modulators and serves as the simplest example of the approach. This figure of merit is then related back to the microscopic properties in the context of a dye-doped polymer, and its fundamental limits are obtained to provide a target. Surprisingly, the largest figure of merit is not always associated with a large nonlinear-optical response, the quantity that is most often the focus of optimization. An important lesson to materials design is that the figure of merit alone should be optimized. The best device materials can have low nonlinearity provided that the loss is low; or, near resonance high loss may be desirable because it is accompanied by resonantly-enhanced, ultra-large nonlinear response so device lengths are short. Our work shows which frequency range of operation is most promising for optimizing the material figure of merit for electro-optic devices.

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“…Nevertheless, they are not free of challenges since the maximum frequencies of both types of modulators are limited by their capacitances. all these structures, the goal is to maximize the field confinement to take full advantage of either phase shifts induced by Pockels-effect (i.e., 𝜒 2 ) polymers [8][9][10] or nonlinear Kerr-effect (i.e., 𝜒 3 ) polymers. Two widely used structures are Si-organic hybrid (SOH) and plasmonic-organic hybrid (POH) using which modulators with high bandwidths (> 100 GHz) [11,12] and ultra-low 𝑉 𝜋 𝐿 [13][14][15][16] have been fabricated so far.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Polling and Infiltration for Highly-Efficient Electro-Optic Polymer-Based Mach-Zehnder Modulators

Taghavi,

Dehghannasiri,

Fan

et al. 2022

Preprint

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An ultra-narrow slot waveguide is fabricated for use in highly-efficient, electrooptic-polymer-based, integrated-optic modulators. Measurement results indicate that 𝑉 𝜋 𝐿's below 1.2 V.mm are possible for balanced Mach-Zehnder modulators using this ultra-narrow slot waveguide on a silicon-organic hybrid platform. Simulated 𝑉 𝜋 𝐿's of 0.35 V.mm have also been obtained. In addition to adapting standard recipes, we developed two novel fabrication processes for achieving miniaturized devices with high modulation sensitivity. To boost compactness and decrease the overall footprint, we use a fabrication approach based on air bridge interconnects on thick, thermally-reflowed, MaN 2410 E-beam resist protected by an alumina layer. To overcome the challenges of high currents and imperfect infiltration of polymers into ultra-narrow slots, we use a carefully designed, atomically-thin layer of TiO 2 as a carrier-barrier to enhance the polling efficiency of our electro-optic polymers. Additionally, finite-difference time-domain simulations are employed to optimize the effect of the thin layer of TiO 2 . As compared to other, non-optimized, cases, our peak measured current is reduced by a factor of 3; scanning electron microscopy images also demonstrate that we achieve almost perfect infiltration. The anticipated increase in total capacitance due to the TiO 2 layer is shown to be negligible. In fact, applying our TiO 2 surface treatment to our ultra-narrow slot, allows us to obtain an improved phase shift efficiency (𝜕𝑛/𝜕𝑉) of ∼94% for a 10 nm TiO 2 layer.

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Analysis of efficiently poled electro-optic polymer/Tio2 vertical slot waveguide modulators

Cited by 17 publications

References 19 publications

Nonlinearities of organic electro-optic materials in nanoscale slots and implications for the optimum modulator design

Nonlinearities of organic electro-optic materials in nanoscale slots and implications for the optimum modulator design

Fundamental limits on the electro-optic device figure of merit

Enhanced Polling and Infiltration for Highly-Efficient Electro-Optic Polymer-Based Mach-Zehnder Modulators

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