Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness

Kobayashi, Yusuke; Kakushima, Kuniyuki; Ahmet, Parhat; Rao, V. Ramgopal; Tsutsui, Kazuo

doi:10.1016/j.microrel.2010.01.003

Cited by 5 publications

(3 citation statements)

References 7 publications

(8 reference statements)

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“…This result demonstrates the excellent SCEs immunity of the gate-around Si nanowire structure, which is consistent with the previous reports. 14,15) The I on -I off characteristics of the NW and planar FETs are shown in Fig. 4.…”

Section: Resultsmentioning

confidence: 99%

Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties

Feng

Hettiarachchi

Sato

et al. 2012

Jpn. J. Appl. Phys.

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Hyperbolic metamaterials in which the dielectric component exhibits critical opalescence have been considered. It appears that fluctuations of the effective refractive index in these materials are strongly enhanced and so 'virtual electromagnetic black holes' may appear as a result of these fluctuations. Therefore, the behaviour of 'optical space' inside hyperbolic metamaterials looks somewhat similar to the behaviour of real physical space-time on the Planck scale.

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Section: Resultsmentioning

confidence: 99%

Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties

Feng

Hettiarachchi

Sato

et al. 2012

Jpn. J. Appl. Phys.

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“…Among the principal device parameters, W fin is particular to FinFETs (not exists in conventional planar MOSFETs) and expected to play an important role in SCEs. Therefore, we investigated relationship between W fin and SCEs systematically [10]. Drain-induced barrier lowering (DIBL) and a sub-threshold swing were employed as indices of the strength of SCEs.…”

mentioning

confidence: 99%

“…The detailed mechanism was discussed in the ref. [10]. Figure 4 indicates that W fin =10nm (employed in the standard FinFET) is not enough to suppress the SCEs.…”

mentioning

confidence: 99%

Analysis of Threshold Voltage Variations in Fin Field Effect Transistors

Tsutsui

Kobayashi

Kakushima

et al. 2011

KEM

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To conduct analyses of variability of threshold voltage (Vth) in FinFETs whose structures are based on the ITRS, sensitivity coefficients of variations of Vth caused by the fluctuation of principal device parameters were derived by device simulation. The sensitivity coefficient correlated with each device parameter was separated into two factors: one due to an intrinsic mechanism (1D factor) and another due to short-channel effects (2D factor). The 1D and 2D factors were found to cancel each other out in some cases, thereby reducing the sensitivity coefficient. Based on these results, FinFETs with various structures were examined and controlling short-channel effects was demonstrated to be an effective way to reduce the variation in the threshold voltage.

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A review of nanoscaled bulk double gate and triple gate FETs for low standby power application

Kumar

Roy

2019

2019 3rd International Conference on Trends in Electronics and Informatics (ICOEI)

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Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness

Cited by 5 publications

References 7 publications

Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties

Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties

Analysis of Threshold Voltage Variations in Fin Field Effect Transistors

A review of nanoscaled bulk double gate and triple gate FETs for low standby power application

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