2012
DOI: 10.1143/jjap.51.04dc06
|View full text |Cite
|
Sign up to set email alerts
|

Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties

Abstract: Hyperbolic metamaterials in which the dielectric component exhibits critical opalescence have been considered. It appears that fluctuations of the effective refractive index in these materials are strongly enhanced and so 'virtual electromagnetic black holes' may appear as a result of these fluctuations. Therefore, the behaviour of 'optical space' inside hyperbolic metamaterials looks somewhat similar to the behaviour of real physical space-time on the Planck scale.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

1
8
0

Year Published

2012
2012
2024
2024

Publication Types

Select...
6
1

Relationship

1
6

Authors

Journals

citations
Cited by 11 publications
(9 citation statements)
references
References 51 publications
1
8
0
Order By: Relevance
“…Note that the S Id values from various L of NW and planar FETs almost follow on different universal lines, indicating that the structural difference (3D or planar) is critical for specifying the noise spectral density. The similar behavior was found in comparison between NW and planar FETs for [100] channel direction (3,4). We observed this superiority in NW regardless of cross-sectional shapes and channel direction, strongly indicating that it is a fundamental property that resides in 3D structures.…”
Section: Nw Shapes and Static Propertiessupporting
confidence: 84%
See 1 more Smart Citation
“…Note that the S Id values from various L of NW and planar FETs almost follow on different universal lines, indicating that the structural difference (3D or planar) is critical for specifying the noise spectral density. The similar behavior was found in comparison between NW and planar FETs for [100] channel direction (3,4). We observed this superiority in NW regardless of cross-sectional shapes and channel direction, strongly indicating that it is a fundamental property that resides in 3D structures.…”
Section: Nw Shapes and Static Propertiessupporting
confidence: 84%
“…Haartman et al reported the reduction of the noise intensity by using MOSFET on silicon-on-insulator (SOI) substrates (2). In this paper, we focus on the noise property of NW-FETs, specifically by comparing it to that of planar FETs (3,4).…”
Section: Introductionmentioning
confidence: 99%
“…Metal oxide semiconductor has moderate sensitivity, rapid sensor recovery, and long sensor life with affordable cost. The disadvantages of this type of sensor include power consumption, high temperature operation, and sensitivity to humidity . While conducting polymer sensor can operate at ambient temperature and is inexpensive, the sensor life is influenced by oxidation due to its sensitivity to humidity and temperature .…”
Section: Sensors Used In Meat Industrymentioning
confidence: 99%
“…The disadvantages of this type of sensor include power consumption, high temperature operation, and sensitivity to humidity. 94,100,104 While conducting polymer sensor can operate at ambient temperature and is inexpensive, the sensor life is influenced by oxidation due to its sensitivity to humidity and temperature. 94,105,106,132 The calorimetric sensor is cheap, stable, and shows high specificity for oxidized compounds.…”
Section: Electronic Nosementioning
confidence: 99%
“…The arising of new physical phenomena on the nanoscale promoted the emerging of Si nanostructures for the past, present and future technologies. In particular, silicon nanowires (Si NWs) developed as a novel resource in many different fields, such as electronics [ 5 , 6 , 7 ], photovoltaics [ 8 , 9 , 10 ], photonics [ 11 , 12 , 13 ], and sensing [ 14 , 15 , 16 ], as schematized in Figure 1 .…”
Section: Introductionmentioning
confidence: 99%