Analysis of degradation mechanisms in AlInN/GaN HEMTs by electroluminescence technique

Berthet, Fanny; Petitdidier, S.; Guhel, Y.; Trolet, Jean Lionel; Mary, P.; Vivier, A.; Gaquière, Christophe; Boudart, B.

doi:10.1016/j.sse.2016.10.039

Cited by 4 publications

(1 citation statement)

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“…It can be done immediately after the fabrication of the devices or electrical stresses under operational conditions and/or in a radiation environment. [7,[11][12][13][14][15][16][17] Thus, the characterization of trapping or detrapping phenomena can be investigated by various techniques such as capacitance deep-level transient spectroscopy, [18] drain-current deep-level transient spectroscopy, [9] gate and drain lag measurements, [19] double pulse measurements, [20] photoionization spectroscopy, [21] electroluminescence techniques, [22] and deep-level optical spectroscopy. [23] All these techniques can provide information on the trapping effects responsible for the electrical performance degradation of GaN-based devices.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination

Strenaer,

Guhel,

Gaquière

et al. 2024

Physica Status Solidi (a)

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The aim of this article is to show that it is possible to rapidly estimate the activation energies of electron traps in AlInN/GaN transistors operating at room temperature by combining pulsed electrical measurements with photoionization techniques using Infra‐Red (IR) illumination. This technique avoids the time‐consuming task of performing electrical measurements at different temperatures in order to determine the activation energies of the electron traps using Arrhenius laws. Thus, a deep level at 1.3 eV was detected and attributed to the presence of carbon in GaN buffer of the component. Moreover, we have highlighted that the trapping effect can be screened when the transistors are biased with a high drain‐source voltage during pulsed measurements.This article is protected by copyright. All rights reserved.

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