Analysis of Dead-Time Energy Loss in GaN-Based TCM Converters With an Improved GaN HEMT Model

Zhang, Yi; Xu, Wei; Xie, Yue; Liu, Teng; Wu, Zongheng; Chen, Cai; Kang, Yong; Peng, Han

doi:10.1109/tpel.2022.3217456

Cited by 6 publications

(2 citation statements)

References 30 publications

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“…The development of a switching power converter board based on wide band-gap (WBG) semiconductors brings numerous performance advantages while also opening up many issues [1]; the most important ones are related to modelling [2,3], losses in both switching [4,5] and conduction operation [6], and EMI (ElectroMagnetic Interference) effects [7]. In fact, such devices, particularly those based on GaN which allow higher switching frequency compared to traditional silicon devices, require a more detailed knowledge of the device and layout parasitics and can generate conducted and radiated emissions.…”

Section: Introductionmentioning

confidence: 99%

GaN and SiC Device Characterization by a Dedicated Embedded Measurement System

et al. 2023

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This work proposes a comparison among GaN and SiC device main parameters measured with a dedicated and low-cost embedded system, employing an STM32 microcontroller designed to the purpose. The system has the advantage to avoid the use of expensive laboratory measurement equipment to test the devices, allowing to obtain their behavior in operating conditions. The following KPIs (Key Performance Indicators) are measured and critically compared: threshold voltage, on-resistance and input capacitance. All the measurements are carried out in a short time interval and on a wide range of switching frequencies, ranging from 10 kHz to 1 MHz. This investigation is focused on the deviation of the figures of merit when the switching frequency changes, since it is crucial for wide-bandgap devices. The devised, low-cost, microcontroller unit allows high flexibility and system portability, while the employed equivalent-time sampling technique overcomes some issues related to the need of high sampling frequency. It allows good performances with common microcontroller embedded AD converters. To validate the proposed system, the obtained results have been compared with the time-domain waveforms acquired with a traditional laboratory oscilloscope and a study of the system’s measurement errors has been carried out. Results show that GaN devices achieve a higher efficiency with respect to SiC devices in the considered range of switching frequencies. The on-resistance exhibited by GaN devices shows, as expected, an increase with frequency, which happens to switching losses, too. On the other hand, GaN devices are more sensitive to parasitic effects and the high dV/dt, due to the reduced switching times, can excite unwanted ringing phenomena.

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Section: Introductionmentioning

confidence: 99%

GaN and SiC Device Characterization by a Dedicated Embedded Measurement System

et al. 2023

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“…AlGaN/GaN high electron mobility transistors (HEMTs) have attracted great attention in high-frequency and high-power electronics owing to the excellent material properties such as high carrier mobility, high-density carriers of two-dimensional electron gas (2DEG), and high critical breakdown field. [1][2][3][4][5][6][7][8][9] However, due to the fact that devices operate at high voltage and high frequency, parasitic inductance and capacitance affect the switching characteristics of devices, making it difficult to accurately model the switching process of GaN devices. [10][11][12][13][14][15] In recent years, there have been many studies of modeling the switching characteristics of GaN devices.…”

Section: Introductionmentioning

confidence: 99%

Gate Voltage Oscillation Model and Suppression Method for Enhancement‐Mode GaN Devices in Half‐Bridge Circuits

Luo

Zhao

et al. 2023

Physica Status Solidi (a)

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This paper analyzes the issue of gate voltage oscillations in AlGaN/GaN high electron mobility transistors (HEMTs) based on the half‐bridge circuit. With the influence of the parasitic parameters, the variation of high drain‐source voltage (Vds) can affect the gate‐source voltage (Vgs), thus, resulting in serious gate voltage oscillations, which may cause over‐voltage, false turn‐on/off, and even gate breakdown. A large‐signal model is proposed to study this oscillations phenomenon. The oscillation model of Vgs is proposed as a step response of Vds. Based on the model, the influence of Vds and circuit parameters on Vgs is investigated and guidelines to suppress the oscillation are given. Reducing the gate and power loop inductance in PCB wiring, increasing the gate resistance of inactive switch can be significantly suppress the oscillation. Finally, the model is verified by both simulation results and experimental results.This article is protected by copyright. All rights reserved.

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Differential Single-Phase Inverters With Active Power Decoupling: A Survey

Musona

Șerban

2023

IEEE Access

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Analysis of Dead-Time Energy Loss in GaN-Based TCM Converters With an Improved GaN HEMT Model

Cited by 6 publications

References 30 publications

GaN and SiC Device Characterization by a Dedicated Embedded Measurement System

GaN and SiC Device Characterization by a Dedicated Embedded Measurement System

Gate Voltage Oscillation Model and Suppression Method for Enhancement‐Mode GaN Devices in Half‐Bridge Circuits

Differential Single-Phase Inverters With Active Power Decoupling: A Survey

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