Abstract:This work proposes a comparison among GaN and SiC device main parameters measured with a dedicated and low-cost embedded system, employing an STM32 microcontroller designed to the purpose. The system has the advantage to avoid the use of expensive laboratory measurement equipment to test the devices, allowing to obtain their behavior in operating conditions. The following KPIs (Key Performance Indicators) are measured and critically compared: threshold voltage, on-resistance and input capacitance. All the meas… Show more
“…In [1], Vella et al compare the main parameters of GaN and SiC devices, measured with a dedicated and low-cost embedded system. It is shown that GaN devices achieve higher efficiency with respect to SiC devices in the considered range of switching frequencies.…”
The deployment of DC energy systems is an attractive alternative to conventional AC-based energy distribution systems, improving the efficiency of energy supplies and promoting renewable energies [...]
“…In [1], Vella et al compare the main parameters of GaN and SiC devices, measured with a dedicated and low-cost embedded system. It is shown that GaN devices achieve higher efficiency with respect to SiC devices in the considered range of switching frequencies.…”
The deployment of DC energy systems is an attractive alternative to conventional AC-based energy distribution systems, improving the efficiency of energy supplies and promoting renewable energies [...]
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