Analysis of current–voltage and capacitance–voltage-frequency characteristics in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocomposite interfacial layer

Aldemir, Durmuş Ali; Esen, Mustafa; Kökçe, Ali; Karataş, Selda; Özdemir, Ahmet Faruk

doi:10.1016/j.tsf.2011.04.011

Cited by 29 publications

(12 citation statements)

References 34 publications

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“…Aldemir et al [16] investigated the effects of a thin polythiophene-silicon dioxide (PTh-SiO 2 ) nanocomposite interlayer on the electrical characteristics of Al/p-Si Schottky diodes at room temperature. The diodes showed good rectifying behaviour.…”

Section: Introductionmentioning

confidence: 99%

Temperature effects on the electrical characteristics of $$\mathrm{Al}/\mathrm{PTh}-\mathrm{SiO}_{2}/\mathrm{p\hbox {-}Si}$$ Al / PTh - SiO 2 / p - Si structure

2017

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The temperature-dependent current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the fabricated Al/p-Si Schottky diodes with the polythiopene-SiO 2 nanocomposite (PTh-SiO 2) interlayer were investigated. The ideality factor of Al/PTh-SiO 2 /p-Si Schottky diodes has decreased with increasing temperature and the barrier height has increased with increasing temperature. The change in the barrier height and ideality factor values with temperature was attributed to inhomogeneties of the zero-bias barrier height. Richardson plot has exhibited curved behaviour due to temperature dependence of barrier height. The activation energy and effective Richardson constant were calculated as 0.16 eV and 1.79 × 10 −8 A cm −2 K −2 from linear part of Richardson plots, respectively. The barrier height values determined from capacitance-voltage-temperature (C-V-T) measurements decrease with increasing temperature on the contrary of barrier height values obtained from I-V-T measurements.

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Section: Introductionmentioning

confidence: 99%

Temperature effects on the electrical characteristics of $$\mathrm{Al}/\mathrm{PTh}-\mathrm{SiO}_{2}/\mathrm{p\hbox {-}Si}$$ Al / PTh - SiO 2 / p - Si structure

2017

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“…This behavior of Schottky barrier height obtained from two methods can be explained by the inhomogeneities that occur at metal/semiconductor interface. This is due to structural defects, stacking faults, and non-uniformity of the interfacial organic layer at Ag/SiNWs interface [29][30][31]. From Table 4, we deduce that the presence of MEH-PPV leads 5.…”

Section: Resultsmentioning

confidence: 93%

Improvement of the Electrical Performance of Ag/MEH-PPV/SiNWs Schottky Diode by the Insertion of a Thin Layer of MEH-PPV Polymer and Study of the Annealing Effect

Jerbi

Rahmani

Ajlani

et al. 2023

J Inorg Organomet Polym

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Poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV) thin layer was deposited on silicon nanowires (SiNWs) by electroless dipping method. SiNWs were obtained using Ag-assisted chemical etching process. Scanning Electron Microscopy (SEM) images reveal a vertical alignment of the SiNWs as well as the formation of MEH-PPV layer on their surfaces. The presence of MEH-PPV polymer on the SiNWs surface was confirmed by Energy-dispersive X-ray (EDX). Current-Voltage (I-V) measurements were performed for the electrical characterization of Ag/MEH-PPV/SiNWs diodes before and after annealing. The ideality factor (n), the barrier height (φb) and the series resistance (RS) are determined using the Cheung method. The diode parameters are strongly affected by the immersion duration in MEH-PPV solution as well as the annealing temperature. The rectification rate of the diodes was increased by MEH-PPV deposition. The annealing temperature has a great influence on the diode parameters by the thermal activation of carriers at Ag/MEH-PPV and MEH-PPV/SiNWs interfaces. I-V characteristics show an ohmic character for temperatures above 250° C. The electrical parameters such as equivalent carrier concentration (ND) and built-in voltage (Vb) and other values of φb are calculated from Capacitance-Voltage (C-V) measurements.

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“…To evaluate the heterojunction parameters by TE theory, the value was computed from the slope of the linear part obtained from the plot of ln versus , while the value was computed from the 0 value computed from the straight line intercept of the ln -at an applied bias voltage of 0 V. In addition, the group was made aware of the fact that the value of 0 for activation energy ( ) could be computed from the slope of the Arrhenius plot of ln 0 versus 1000/T. To evaluate the value by Cheung's method, the relationships of d /d(ln )and Cheung's function ( ( )) [16][17][18] and were plotted. Subsequently, the value for was computed from the slope of these plots.…”

Section: Methodsmentioning

confidence: 99%

“…Subsequently, the value for was computed from the slope of these plots. To affirm the agreement and precision of the values for and , Norde's method was utilized, by which the relationship between Norde's function ( ( )) [16,17,19] and was plotted to compute as well as from the minimum point of ( )plot.…”

Section: Methodsmentioning

confidence: 99%

Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi₂ Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

Sittimart

Nopparuchikun

Promros

2017

Advances in Materials Science and Engineering

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In this study, n-type -FeSi 2 /p-type Si heterojunctions, inside which n-type -FeSi 2 films were epitaxially grown on p-type Si(111) substrates, were created using radio frequency magnetron sputtering at a substrate temperature of 560 ∘ C and Ar pressure of 2.66 × 10 −1 Pa. The heterojunctions were measured for forward and reverse dark current density-voltage curves as a function of temperature ranging from 300 down to 20 K for computation of heterojunction parameters using the thermionic emission (TE) theory and Cheung's and Norde's methods. Computation using the TE theory showed that the values of ideality factor ( ) were 1.71 at 300 K and 16.83 at 20 K, while the barrier height ( ) values were 0.59 eV at 300 K and 0.06 eV at 20 K. Both of the and values computed using the TE theory were in agreement with those computed using Cheung's and Norde's methods. The values of series resistance ( ) computed at 300 K and 20 K by Norde's method were 10.93 Ω and 0.15 MΩ, respectively, which agreed with the values found through computation by Cheung's method. The dramatic increment of value at low temperatures was likely attributable to the increment of value at low temperatures.

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Analysis of current–voltage and capacitance–voltage-frequency characteristics in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocomposite interfacial layer

Cited by 29 publications

References 34 publications

Temperature effects on the electrical characteristics of $$\mathrm{Al}/\mathrm{PTh}-\mathrm{SiO}_{2}/\mathrm{p\hbox {-}Si}$$ Al / PTh - SiO 2 / p - Si structure

Temperature effects on the electrical characteristics of $$\mathrm{Al}/\mathrm{PTh}-\mathrm{SiO}_{2}/\mathrm{p\hbox {-}Si}$$ Al / PTh - SiO 2 / p - Si structure

Improvement of the Electrical Performance of Ag/MEH-PPV/SiNWs Schottky Diode by the Insertion of a Thin Layer of MEH-PPV Polymer and Study of the Annealing Effect

Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi₂ Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

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Analysis of current–voltage and capacitance–voltage-frequency characteristics in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocomposite interfacial layer

Cited by 29 publications

References 34 publications

Temperature effects on the electrical characteristics of $$\mathrm{Al}/\mathrm{PTh}-\mathrm{SiO}_{2}/\mathrm{p\hbox {-}Si}$$ Al / PTh - SiO 2 / p - Si structure

Temperature effects on the electrical characteristics of $$\mathrm{Al}/\mathrm{PTh}-\mathrm{SiO}_{2}/\mathrm{p\hbox {-}Si}$$ Al / PTh - SiO 2 / p - Si structure

Improvement of the Electrical Performance of Ag/MEH-PPV/SiNWs Schottky Diode by the Insertion of a Thin Layer of MEH-PPV Polymer and Study of the Annealing Effect

Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

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Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi₂ Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering