Analysis of current transport mechanisms in sol-gel grown Si/ZnO heterojunction diodes in high temperature environment

Singh, Satyendra Kumar; Hazra, Purnima

doi:10.1016/j.spmi.2019.01.013

Cited by 13 publications

(3 citation statements)

References 14 publications

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“…The rectification characteristics were evaluated based on the ratio between the maximum currents at ±3 V, which provided values distributed over a wider range. While ITO-based prototype devices revealed more homogeneous RR values of12 ( P1 ), 15 ( P2 ), and 13.5 ( P3 ), for those based on the Al substrate, the RR values are quite different: 9.7 ( P1 ), 63 ( P2 ), and 19 ( P3 ), which are more or less dependent on the n-type strength of each polyimide, according to our previous reports. , Also, the obtained values are comparable with those based on inorganic or other organic materials. − …”

Section: Resultssupporting

confidence: 81%

“…While ITO-based prototype devices revealed more homogeneous RR values of12 (P1), 15 (P2), and 13.5 (P3), for those based on the Al substrate, the RR values are quite different: 9.7 (P1), 63 (P2), and 19 (P3), which are more or less dependent on the n-type strength of each polyimide, according to our previous reports. 28,46 Also, the obtained values are comparable with those based on inorganic 61 or other organic materials. 62−64 Another important parameter used for diode characterization is the reverse saturation current (I 0 ), which is caused by the drift of the minority carriers from the neutral regions to the depletion region.…”

Section: Resultssupporting

confidence: 68%

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Assessing the Electrical Characteristics of p–n Heterojunction Prototype Diodes Realized with n-Type Polyimide Materials

Constantin¹,

Lisă

Damaceanu³

2021

Macromolecules

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Three new aromatic polyimides with donor–acceptor topology consisting of electron-donating ortho-catenated triphenylamine (TPA) modified with two trifluoromethyl (CF3) groups and electron-accepting naphthyl(di)imide- or perylenediimide-based moieties were synthesized and thoroughly investigated. Their main physicochemical properties were assessed according to the structural variation of the dianhydride segment. The polymers exhibited advantageous solubility in polar solvents, which allowed their processing into homogeneous thin films under friendly conditions, as well as good thermal stability. The photo-optical activity investigated in detail by UV–vis and fluorescence spectroscopy was finely modulated by the electron-accepting strength of the dianhydride segment, with light emission originating from both monomeric and intramolecular charge transfer transitions, which is otherwise dependent on the polarity of the surrounding solvent molecules. Due to the high electron-accepting characteristics promoted by both CF3 and naphthyl(di)imide or perylenediimide, these polymers behaved as n-type materials. The highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energies evaluated according to the electrochemical activity suggested the polymers suitability for use in p–n heterojunctions. Thus, to prove the electron transporting capability, prototype diodes have been realized with these polyimides in an indium tin oxide (ITO)(Al)/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/polyimide/eGaIn configuration. Their current–voltage characteristics revealed a rectification ratio up to 63, moderate to high shunt resistance, moderate to low series resistance, and moderate current leakages. The charge transport evaluation disclosed the tunneling phenomenon as the main mechanism that drives the realized prototype diodes, with an ideality factor down to 5.48. The nice combined features encountered for these polyimides make them appealing candidates as n-type materials for advanced optoelectronic applications.

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Section: Resultssupporting

confidence: 81%

Section: Resultssupporting

confidence: 68%

Assessing the Electrical Characteristics of p–n Heterojunction Prototype Diodes Realized with n-Type Polyimide Materials

Constantin¹,

Lisă

Damaceanu³

2021

Macromolecules

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show abstract

“…The heterojunction exhibits typical pn diode behavior in terms of I–V characteristics, and all curves exhibit typical rectification characteristics with rectification ratios of 1.38, 1.29, and 29.37 at ±8 V at 25 °C, 100 °C, and 175 °C, respectively. The change in rectification ratio is usually directly related to the change in leakage current [ 38 ]. When the bias voltage is higher than 4.6 V, the forward currents of the heterojunctions at 100 °C and 175 °C tend to decrease.…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence and Electrical Properties of n-Ce-Doped ZnO Nanoleaf/p-Diamond Heterojunction

et al. 2022

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The n-type Ce:ZnO (NL) grown using a hydrothermal method was deposited on a p-type boron-doped nanoleaf diamond (BDD) film to fabricate an n-Ce:ZnO NL/p-BDD heterojunction. It shows a significant enhancement in photoluminescence (PL) intensity and a more pronounced blue shift of the UV emission peak (from 385 nm to 365 nm) compared with the undoped heterojunction (n-ZnO/p-BDD). The prepared heterojunction devices demonstrate good thermal stability and excellent rectification characteristics at different temperatures. As the temperature increases, the turn-on voltage and ideal factor (n) of the device gradually decrease. The electronic transport behaviors depending on temperature of the heterojunction at different bias voltages are discussed using an equilibrium band diagram and semiconductor theoretical model.

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Self-powered solar-blind UV photodetectors based on Zn:NiO/p-Si heterojunction devices

et al. 2023

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Analysis of current transport mechanisms in sol-gel grown Si/ZnO heterojunction diodes in high temperature environment

Cited by 13 publications

References 14 publications

Assessing the Electrical Characteristics of p–n Heterojunction Prototype Diodes Realized with n-Type Polyimide Materials

Assessing the Electrical Characteristics of p–n Heterojunction Prototype Diodes Realized with n-Type Polyimide Materials

Photoluminescence and Electrical Properties of n-Ce-Doped ZnO Nanoleaf/p-Diamond Heterojunction

Self-powered solar-blind UV photodetectors based on Zn:NiO/p-Si heterojunction devices

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