Analysis of critical-length data from Electromigration failure studies

Dwyer, Vincent M.

doi:10.1016/j.microrel.2011.06.036

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Back-end Failure Mechanisms1

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“…EM is a relevant mechanism in both aluminum (Al) and copper (Cu) interconnects, where Cu replaced Al due to its lower resistivity and higher melting point. For interconnects lower than a critical length of L eff [51], these two forces perfectly balance each other (the back-stress force is higher in shorter lines due to steeper stress gradients), and hence, the metal line is said to be immune to EM effects. There are two key mechanisms of failure in EM with different locations of failure-one at the via end and one at the line end ( and (c)) [48].…”

Section: Back-end Failure Mechanismsmentioning

confidence: 99%