“…In the EFIE, formulation, the total tangential electric feld on the conducting radiating surface is equated to zero, i.e. Etan = 0 on conducting patches (1) If an equivalent current J,, on the conducting patches is assumed to exist, then L(JJ) + Ei = 0 on conducting patches (2) where Ei represents the excitation. Here L(J,) represents the electric field operator which produces an electric field due to Js.…”
Section: Electrical Field Integral Equationmentioning
confidence: 99%
“…Much progress has been made in the last decade in the development of numerical solution procedures for analyzing radiation and scattering by arbitrary shaped microstrip conducting structures [1,2]. These procedures, primarily are based on the surface equivalence principle [1] and the wellknown method of moments [3] solution procedure to solve the integral equations.…”
A new numerical procedure is developed for the solution of the electric field integral equation (EFIE) for arbitrary shaped microstrip structures. This approach is superior over conventional EFIE techniques particularly in the low frequency region or where the structure to be analyzed is electrically small. A pair of new basis functions is presented which are essential to the solution in the entire frequency range of interest. The new basis function decompose the surface current density into divergence -less and curl free parts which essentially get decoupled at the very low end of the frequency spectrum. Typical numerical results are presented to illustrate the difference in the results between the two methods, for certain examples.
“…In the EFIE, formulation, the total tangential electric feld on the conducting radiating surface is equated to zero, i.e. Etan = 0 on conducting patches (1) If an equivalent current J,, on the conducting patches is assumed to exist, then L(JJ) + Ei = 0 on conducting patches (2) where Ei represents the excitation. Here L(J,) represents the electric field operator which produces an electric field due to Js.…”
Section: Electrical Field Integral Equationmentioning
confidence: 99%
“…Much progress has been made in the last decade in the development of numerical solution procedures for analyzing radiation and scattering by arbitrary shaped microstrip conducting structures [1,2]. These procedures, primarily are based on the surface equivalence principle [1] and the wellknown method of moments [3] solution procedure to solve the integral equations.…”
A new numerical procedure is developed for the solution of the electric field integral equation (EFIE) for arbitrary shaped microstrip structures. This approach is superior over conventional EFIE techniques particularly in the low frequency region or where the structure to be analyzed is electrically small. A pair of new basis functions is presented which are essential to the solution in the entire frequency range of interest. The new basis function decompose the surface current density into divergence -less and curl free parts which essentially get decoupled at the very low end of the frequency spectrum. Typical numerical results are presented to illustrate the difference in the results between the two methods, for certain examples.
“…The surface is triangulated, i.e., defined by an appropriate set of faces, edges, vertices and boundary edges. The salient features of triangular basis functions are summarized here [29]. Associated with each edge are two triangles defined by T + n and T − n .…”
Section: Utilization Of Triangular Basis Functionsmentioning
confidence: 99%
“…Knowing the current distribution on the microstrip, we easily obtain the far-field radiation pattern, as presented in [39,29]. This feature is of the greatest importance for the case of microstrip patch antennas.…”
Section: Numerical Simulation Of a Match-terminationmentioning
confidence: 99%
“…In section 2, the formulation of the open microstrip problem is presented. We solve the Sommerfeld-type integral equation by the method of moments (MoM) [28,29]. In order to treat arbitrarily shaped microstrip patches, we consider triangular basis functions, first introduced by Rao [30,31].…”
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