Analysis of Anodic Oxidation Current of Flattened p-Type Si(111) Surface in Aqueous Solution

Bensliman, Fahd; Fukuda, Atsushi; Mizuta, Naomi; Matsumura, Michio

doi:10.1149/1.1593047

Cited by 8 publications

(12 citation statements)

References 34 publications

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“…In the course of time, the inability to reduce the porosity and improve the dielectric properties of these oxides has caused a decrease of interest in this topic. In the last decade, just a few articles devoted to this topic have appeared in the literature [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Parallel-local anodic oxidation of silicon surfaces by soft stamps

Albonetti

Martínez²,

Losilla³

et al. 2008

Nanotechnology

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We investigate the fabrication of nanometric patterns on silicon surfaces by using the parallel-local anodic oxidation technique with soft stamps. This method yields silicon oxide nanostructures 15 nm high, namely at least five times higher than the nanostructures made with local anodic oxidation using atomic force microscopy, and thanks to the size of the stamp enables one to pattern the surface across a centimetre length scale. To implement this technique, we built a machine to bring the metallized polydimethylsiloxane stamp in contact with the silicon surface, subsequently inserted in a sealed chamber with controlled relative humidity. The oxide nanostructures are fabricated when a bias voltage of 36 V is applied between the stamp and the silicon for 2 min, with a relative humidity of 90%. The flexibility of the stamp enables a homogeneous conformal contact with the silicon surface, resulting in an excellent reproducibility of the process. Moreover, by means of two subsequent oxidations with the same stamp and just rotating the sample, we are able to fabricate complex nanostructures. Finally, a detailed study of the oxidation mechanism, also using a finite element analysis, has been performed to understand the underlying mechanism.

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Section: Introductionmentioning

confidence: 99%

Parallel-local anodic oxidation of silicon surfaces by soft stamps

Albonetti

Martínez²,

Losilla³

et al. 2008

Nanotechnology

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“…In the voltammograms it is clearly observed that the first anodic oxidation steps of Si(111)-H electrodes (black curve) are represented by two current peaks at around 0 (peak A I ) and 1.0 V (peak A II ). The first maximum (A I peak) with a charge density around 1.0 mC cm –2 corresponds to the oxidation of the topmost silicon atoms with rupture of Si–Si and Si–H bonds. , This charge density is approximately the one calculated for the oxidation of two layers of Si atoms of an ideal Si(111) surface, although in the present case the Si-H electrodes have certain surface roughness on the atomic scale. (See Section 3.3.…”

Section: Resultsmentioning

confidence: 50%

“…The anodic pulse was applied for 100 s, which is enough time to pass a charge density of 1.0 mC cm −2 able to oxidize only a few layers of silicon surface. 31 Cyclic voltammetry in the anodic potential region (between −0.6 and 1.5 V) at 0.02 V s −1 was employed for electrochemical characterization of different silicon surfaces.…”

Section: Methodsmentioning

confidence: 99%

“…A thin oxide layer on the silicon surface was obtained applying a potential pulse to the hydrogenated surfaces from −0.6 to 0.2 V versus SCE in 0.1 M acetate buffer solution at pH 5.5 at room temperature. The anodic pulse was applied for 100 s, which is enough time to pass a charge density of 1.0 mC cm –2 able to oxidize only a few layers of silicon surface . Cyclic voltammetry in the anodic potential region (between −0.6 and 1.5 V) at 0.02 V s –1 was employed for electrochemical characterization of different silicon surfaces.…”

Section: Experimental Sectionmentioning

confidence: 99%

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Chemical and Electrochemical Oxidation of Silicon Surfaces Functionalized with APTES: The Role of Surface Roughness in the AuNPs Anchoring Kinetics

et al. 2013

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Oxidation of Si(111) surfaces is a procedure widely used for their further functionalization with 3-aminopropyltriethoxysilane (APTES). In the present work, the formation of silicon oxide is carried out by chemical and electrochemical oxidation of the hydrogenated-silicon surfaces, giving rise to Si-Ox Chem and Si-Ox Echem surfaces, respectively. Both surfaces are then functionalized with APTES solution to form an aminopropylsilane (APS) film, using two quite different concentrations of APTES (0.001 and 0.1% v/v), to compare two limiting situations. At the lowest APTES concentration, the comparison of the kinetics of gold nanoparticles (AuNPs) anchoring process on both surfaces is found to be quite different, not only in the initial rate of NPs anchoring but also in the maximum percentage of coverage. In contrast, the kinetics behavior is almost the same when the surfaces are modified with the highest APTES concentration, reaching the same value of surface coverage. The different or similar behavior of both surfaces is analyzed by a careful characterization of Si-Ox Chem and Si-Ox Echem surfaces using XP spectroscopy and AFM measurements, before and after APS functionalization. The significant differences in the surface roughness of the Si-Ox samples, together with the determination of the number of −NH 3 + moieties after silanization at both APTES concentrations, leads to the conclusion that the availability of −NH 3 + moieties is dependent on two factors: the roughness of the Si-Ox Chem and Si-Ox Echem surfaces as well as the concentration of the APTES solutions. When the APS layer is formed at the lowest APTES concentration, surface roughness controls the number of different types of nitrogen functional groups. In contrast, at the highest APTES concentration, the surface roughness does not have any significant role in the number of −NH 3 + moieties present on both surfaces. Because the kinetics of AuNPs anchoring depends mainly on the probability of interacting with the −NH 3 + groups, the above characterization allows us to explain in a consistent way the kinetics behavior observed for each particular condition of surface preparation.

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“…The current transient is sensitive to the annealing process, which suggests that current can be a good tool for the evaluation of the SijSiO 2 interface structure. It may be interesting to note that the hydrogen-terminated Si surface is anodically oxidized to form the SijSiO 2 interface in solution not containing HF, and this current is sensitive to the structure of the hydrogenterminated Si surface [30,31]. This phenomenon is apparently opposite to the current transient, both phenomena are informative about the surface and interface structures of Si.…”

Section: Introductionmentioning

confidence: 99%