Analysis of AlN thin films by combining TOF-ERDA and NRB techniques

271

256

Thin films of metallic ruthenium were grown by atomic layer deposition (ALD) in the temperature range 275±400 C using bis(cyclopentadienyl)ruthenium (RuCp 2 ) and oxygen as precursors. The ruthenium films were grown on thin Al 2 O 3 and TiO 2 films on glass. X-ray diffraction (XRD) analysis indicated that the films were polycrystalline metallic ruthenium and scanning electron microscopy (SEM) studies showed that the films had excellent conformality. The impurity content of the films, as measured by time-of-flight elastic recoil detection analysis (TOF-ERDA), were very low. All the films had resistivities below 20 lX cm.

Section: Methodsmentioning

confidence: 99%

Ruthenium Thin Films Grown by Atomic Layer Deposition

Aaltonen¹,

Alén

Ritala

et al. 2003

271

256

“…Film crystallinity was examined with a Bruker D8 Advance X-ray diffractometer using Cu Ka a radiation. Film compositions were obtained by TOF±ERDA with a 53 MeV 127 I 10+ ion beam from the 5 MV tandem accelerator EGP-10-II [40,41]. Surface resistances were measured with a CPS four-point probe (Cascade Microtech Inc.) and Keithley 2400 SourceMeter.…”

Section: Methodsmentioning

confidence: 99%

Atomic Layer Deposition of Photocatalytic TiO₂ Thin Films from Titanium Tetramethoxide and Water

Pore

Rahtu

Leskelä

et al. 2004

208

161

Titanium dioxide thin films were grown by atomic layer deposition (ALD) at 200±400 C from a new titanium precursor, titanium tetramethoxide, and water. As compared with other titanium alkoxides studied earlier, titanium methoxide shows the highest stability with respect to thermal decomposition, and can thus be used over the widest range of temperatures. The films deposited at 250 C and above were polycrystalline with the anatase structure, whereas those deposited at 200 C were amorphous. Except for the film deposited at 200 C, the films contained only minor amounts of carbon and hydrogen residues. The crystalline films were shown to have photocatalytic activity in decomposing both methylene blue in aqueous solution, and solid stearic acid coated on the film surface.

“…The thickness of the films below 30 nm was measured using XRR performed on a Bruker D8 Advance X-ray diffractometer. Film composition and residual contamination level were evaluated by TOF-ERDA [40]. A 53 MeV 127 I…”

Section: Methodsmentioning

confidence: 99%

Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Hydroxylamide and Water

Kukli

Ritala

Leskelä

et al. 2004

HfO 2 films were grown by atomic layer deposition (ALD) from a new liquid precursor, Hf(ONEt 2 ) 4 and H 2 O, at temperatures between 250 C and 350 C on borosilicate glass and Si(100) substrates. The highest growth rate was achieved at 300 C, whereas the growth was essentially slower at 250 C and ceased at 350 C. The films possessed an O:Hf ratio of 2.15 ± 0.12, as determined by ion beam analysis. The films were weakly crystallized, showing X-ray diffraction (XRD) peaks characteristic of monoclinic phase. The refractive index of the films varied between 1.93 and 1.96. The effective permittivities of the dielectric layers in Al/HfO 2 /n-Si(100) capacitor structures were close to 10.