Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping

Shih, Hong‐An; Kudo, Masahiro; Suzuki, Toshimitsu

doi:10.1063/1.4737876

Cited by 44 publications

(29 citation statements)

References 32 publications

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“…The conductance method is often applied in HEMT MIS structures to analyze interface states. [63][64][65] Using this technique, careful attention should be given to the E F position at the insulator/AlGaN interface. At reverse bias regime, the interface states could not be responsible for the conductance peak in the conductance-frequency (G-f ) curve, 63,64) because of the associated long emission time constants of interface states.…”

Section: Interpretation Of Hemt Mis C-v Characteristicsmentioning

confidence: 99%

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

Yatabe

Hori

et al. 2014

Jpn. J. Appl. Phys.

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This paper presents a systematic characterization of electronic states at insulators/(Al)GaN interfaces, particularly focusing on insulator/AlGaN/ GaN structures. First, we review important results reported for GaN metal-insulator-semiconductor (MIS) structures. SiO 2 is an attractive material for MIS transistor applications due to its large bandgap and high chemical stability. In-situ SiN x is effective for improving the operation stability of high electron mobility transistors (HEMTs). Meanwhile, Al 2 O 3 /GaN structures have high band offsets and low interface state densities, which are also desirable for insulated gate applications. We have proposed a calculation method for describing capacitance-voltage (C-V) characteristics of HEMT MIS structures for evaluating electronic state properties at the insulator/AlGaN interfaces. To evaluate near-midgap states at insulator/ AlGaN interfaces, a photo-assisted C-V technique using photon energies less than the bandgap of GaN has been developed. Using the calculation in conjunction with the photo-assisted C-V technique, we estimate interface state density distributions at the Al 2 O 3 /AlGaN interfaces.

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Section: Interpretation Of Hemt Mis C-v Characteristicsmentioning

confidence: 99%

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

Yatabe

Hori

et al. 2014

Jpn. J. Appl. Phys.

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“…7 The second rising slope in AC-CV characteristics is a unique feature of MIS-heterostructures with two spatially separated interfaces, yet can only be observed in high-performance MIS-heterostructures with low D it . 7,11,12 In addition, pulsed I D -V GS characterization 9 with long pulse width (W pulse ) of 2 s (equipment's upper limit) and elevated T m is employed to extract deeper interface traps with E C -E T up to 1.1 eV in MIS-HEMT [magenta symbols in Fig. 4(a)], as V TH -thermal-stability of MIS-HEMT is susceptible to the dynamic charging/ discharging of deeper interface traps (to be illustrated later).…”

mentioning

confidence: 98%

Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors

Yang

Liu

et al. 2014

Applied Physics Letters

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In this work, we attempt to reveal the underlying mechanisms of divergent VTH-thermal-stabilities in III-nitride metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) and MOS-Channel-HEMT (MOSC-HEMT). In marked contrast to MOSC-HEMT featuring temperature-independent VTH, MIS-HEMT with the same high-quality gate-dielectric/III-nitride interface and similar interface trap distribution exhibits manifest thermally induced VTH shift. The temperature-dependent VTH of MIS-HEMT is attributed to the polarized III-nitride barrier layer, which spatially separates the critical gate-dielectric/III-nitride interface from the channel and allows “deeper” interface trap levels emerging above the Fermi level at pinch-off. This model is further experimentally validated by distinct VG-driven Fermi level movements at the critical interfaces in MIS-HEMT and MOSC-HEMT. The mechanisms of polarized III-nitride barrier layer in influencing VTH-thermal-stability provide guidelines for the optimization of insulated-gate III-nitride power switching devices.

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“…We obtain D i $ 10 12 -10 13 cm À2 eV À1 and տ 10 13 cm À2 eV À1 for the devices with and without cleaning by ABS, respectively, for interface state energy levels Շ 1 eV below the AlGaN conduction band edge. While the conductance method was available only for interface state energy levels Շ 0:4 eV below the AlGaN conduction band edge, 7 the C-f-T mapping method enables us to analyze deeper interface states in widebandgap MIS devices. Although the obtained D i for Շ 0:4 eV below the AlGaN conduction band edge is smaller than that by the conductance method, we suppose an overestimation by the conductance method with a leakage conductance.…”

Section: Analysis By Using Capacitance-frequency-temperature Mapmentioning

confidence: 99%

“…[26][27][28][29] Although the conductance method is widely used, there are difficulties in the analysis of deep interface states with long trapping time constants 30 in MIS devices based on wide-bandgap materials like GaN. 6,7,31 Also, the analysis results obtained from the conductance method is affected by the assumed value of the insulator capacitance. Previously, as an extension of the conductance method, we proposed a method using capacitance-frequency-temperature (C-f-T) mapping 7 obtained from the temperature-dependent C-V-f characteristics for GaN-based MIS devices, based on the Lehovec equivalent circuit.…”

Section: Introductionmentioning

confidence: 99%

Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

Shih

Kudo

Suzuki

2014

Journal of Applied Physics

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Articles you may be interested inModeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequencytemperature mapping Appl. Phys. Lett. 101, 043501 (2012); 10.1063/1.4737876 Effects of interface states and temperature on the C -V behavior of metal/insulator/AlGaN/GaN heterostructure capacitorsWe present an analysis method for GaN-based metal-insulator-semiconductor (MIS) devices by using capacitance-frequency-temperature (C-f-T) mapping to evaluate the gate-control efficiency and the interface state density, both exhibiting correlations with the linear-region intrinsic transconductance. The effectiveness of the method was exemplified by application to AlN/AlGaN/GaN MIS devices to elucidate the properties of AlN-AlGaN interfaces depending on their formation processes. Using the C-f-T mapping, we extract the gate-bias-dependent activation energy with its derivative giving the gate-control efficiency, from which we evaluate the AlN-AlGaN interface state density through the Lehovec equivalent circuit in the DC limit. It is shown that the gatecontrol efficiency and the interface state density have correlations with the linear-region intrinsic transconductance, all depending on the interface formation processes. In addition, we give characterization of the AlN-AlGaN interfaces by using X-ray photoelectron spectroscopy, in relation with the results of the analysis. V C 2014 AIP Publishing LLC. [http://dx.

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Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping

Cited by 44 publications

References 32 publications

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors

Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

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