Analysis of AlGaAs/GaAs Heterojunction Photodetector with a Two-Dimensional Channel Modulated by Gate Voltage

Highly sensitive InGaAs∕InAlAs quantum wire photo-FET

“…Compound semiconductor materials are essential if we are to extend the spectral range and sensitivity of photodetectors by flexibly designing the bandgap profile and achieving high carrier mobility. It is reported that high electron mobility transistors (HEMTs) have a responsivity of about 3 kA=W as a photodetector [1]. Furthermore, we have been exploiting the possibility of forming a quantum nanostructure on a patterned substrate as a cost-effective way of realising a highperformance device without high-resolution lithography [2,3].…”