Analysis of a Front-Yoke Stacked-Type TMR Head for Perpendicular Magnetic Recording.

賢司, 町田; 直人, 林; 泰敬, 宮本; 孝彦, 玉城; 治雄, 奥田

doi:10.3379/jmsjmag.26.293

Cited by 3 publications

(3 citation statements)

References 5 publications

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“…Key challenges of spin-polarized electron tunnelling theories, material properties and technologies in developing both magnetoresistive random access memory (MRAM) and magnetic read-heads in hard disk drives (HDD) using a magnetic tunnel junction (MTJ) as the MRAM fundamental element and the field sensitive sensor recently have had a strong appeal to researchers [1][2][3][4][5]. Besides investigation of the single barrier MTJ (SBMTJ) with the single-spinned layer structure of antiferromagnet/ferromagnet1/insulator/ferromagnet2 (AFM/FM1/I/FM2), both theoretical and experimental research on the double barrier MTJ (DBMTJ) with the double-spinned layer structure of antiferromagnet1/ferromagnet1/insulator1/ ferromagnet2/insulator2/ferromagnet3/antiferromagnet2 (AFM1/FM1/I1/FM2/I2/FM3/AFM2) are also very interesting topics.…”

Section: Introductionmentioning

confidence: 99%

Switching properties and dynamic domain structures in double barrier magnetic tunnel junctions

Han¹,

Zhao²,

Li³

et al. 2004

Journal of Magnetism and Magnetic Materials

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Section: Introductionmentioning

confidence: 99%

Switching properties and dynamic domain structures in double barrier magnetic tunnel junctions

Han¹,

Zhao²,

Li³

et al. 2004

Journal of Magnetism and Magnetic Materials

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“…A high TMR ratio combined with a low junction resistance and a comparatively small switching field based on the non-single crystal magnetic-tunnel-junctions (MTJs) with single-barrier (SB) and double-barrier (DB) layers are continually desirable because they can provide greater signal level, lower power consumption, high speed, and larger design margin for developing magnetoresistance devices such as novel magnetic random access memory (MRAM), TMR-read heads for ultra-high density magnetic storage, and other magnetic sensors [1][2][3][4]. Although many investigations on new junction materials and structures for improving TMR ratio have been achieved in recent years [5][6][7][8][9][10], fabrication of good-quality polycrystal or amorphous MTJs is still a key challenge for the actual device applications with low cost.…”

Section: Introductionmentioning

confidence: 99%

Microfabrication and magnetoelectric properties of amorphous magnetic-tunnel-junctions with Co–Fe–B/Al–O/Co–Fe–B hardcore structure

Han¹,

Zhang²,

Zeng³

et al. 2006

Journal of Magnetism and Magnetic Materials

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“…Tremendous interest has been devoted to the tunnel magnetoresistance (TMR) effect 1,2,3,4,5,6,7,8,9,10 due to the high application potential in magnetic random access memory (MRAM) and magneticread-head technology. 7,11,12,13,14 Spin-electron transport and nanoscale magnetism in ferromagnet/insulator/ferromagnet (FM/I/FM) junction structure play a very important role in this effect. Up to present, although considerable progress on both experimental and theoretical studies of TMR effect in FM/I/FM junctions has been achieved, intrinsic magnetoelectric properties of magnetic tunnel junctions (MTJs) as well as spin-electron transport theory have not yet been generally reported.…”

mentioning

confidence: 99%

Magnon- and phonon-assisted tunneling in a high-magnetoresistance tunnel junction using Co75Fe25 ferromagnetic electrodes

Han

2003

Physics Letters A

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Magnetoelectric properties of the spin-valve-type tunnel junction of Ta(5 nm)/Ni79Fe21 (25 nm)/Ir22Mn78 (10 nm)/Co75Fe25 (4 nm)/Al (0.8 nm)-oxide/Co75Fe25 (4 nm)/Ni79Fe21 (20 nm)/Ta (5 nm) are investigated both experimentally and theoretically. It is shown that both magnon and phonon excitations contribute to the tunneling process. Moreover, we show that there are two branches of magnon with spin S = 1/2 and 3/2 respectively. The theoretical results are in good agreement with the experimental data.Tremendous interest has been devoted to the tunnel magnetoresistance (TMR) effect 1,2,3,4,5,6,7,8,9,10 due to the high application potential in magnetic random access memory (MRAM) and magneticread-head technology. 7,11,12,13,14 Spin-electron transport and nanoscale magnetism in ferromagnet/insulator/ferromagnet (FM/I/FM) junction structure play a very important role in this effect. Up to present, although considerable progress on both experimental and theoretical studies of TMR effect in FM/I/FM junctions has been achieved, intrinsic magnetoelectric properties of magnetic tunnel junctions (MTJs) as well as spin-electron transport theory have not yet been generally reported. Therefore, a close study of these subjects are important both for the sake of fundamental studies and for the development of high-quality TMR devices.Recently Han et al. performed a systematic experimental investigation of a spin-valve-type tunnel junction of Ta(5 nm)/Ni 79 Fe 21 (3 nm)/Cu (20 nm)/Ni 79 Fe 21 (3 nm)/Ir 22 Mn 78 (10 nm)/Co 75 Fe 25 (4 nm)/Al (0.8 nm)oxide/Co 75 Fe 25 (4 nm)/Ni 79 Fe 21 (20 nm)/Ta (5 nm) by measuring the tunnel current I, dynamic conductance dI/dV and inelastic electron tunneling (IET) spectrum dG/dV (G = I/V ) as functions of dc bias voltage V for both parallel (P) and antiparallel (AP) alignments of the magnetization of the two FM electrodes. 10 By applying the magnon-assisted tunneling theory developed by Zhang et al. 4 they fit their I-V , TMR-V , and TMR-T curves with a S = 3/2 magnon excitation ω q = E m (q/q m ) 2 for cut-off energy E m = 121 meV and q m = √ 4πn where n is the density of atoms at an interface. However, there is more interesting information in their IET spectrum data which has not been fully discussed. In particular, the contribution of phononassisted tunneling to the tunneling current has not been accounted in their model and calculations. 4,10 As shown in Fig. 1 there are three peaks in the IET spectrum from a new sample obtained in this work for V > 0 (or < 0): a strong peak around 20 meV and two small peaks around 90 and 115 meV. The small peak around 121 meV cor-FIG. 1: IET spectrum via the single-magnon-assisted tunneling (dash-dotted curve), single-magnon and phonon-assisted tunneling (dashed curve) and double-magnon and singlephonon-assisted tunneling (solid curve) are plotted as functions of voltage V . The experimental data are plotted as crosses. T = 4.2 K.respond to E m of the magnon excitation. Another small peak around 90 meV is identified to be the phonon excitation in Al 2 O 3 by...

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Analysis of a Front-Yoke Stacked-Type TMR Head for Perpendicular Magnetic Recording.

Cited by 3 publications

References 5 publications

Switching properties and dynamic domain structures in double barrier magnetic tunnel junctions

Switching properties and dynamic domain structures in double barrier magnetic tunnel junctions

Microfabrication and magnetoelectric properties of amorphous magnetic-tunnel-junctions with Co–Fe–B/Al–O/Co–Fe–B hardcore structure

Magnon- and phonon-assisted tunneling in a high-magnetoresistance tunnel junction using Co75Fe25 ferromagnetic electrodes

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