Analysis and Simulation of Heterostructure Devices

Abstract:In this paper, we consider the problem of the research and development of high-speed semiconductor photodetectors suitable for operation as parts of on-chip optical interconnections together with the high-speed laser modulators based on the A III B V nanoheterostructures. This research is aimed at the development of the models and modelling aids designed for the simulation of carrier transport and accumulation processes taking place in on-chip photosensitive devices during the detection of subpicosecond laser pulses. Another aim of the paper is to apply the aforementioned aids for the investigation of GaAs p-i-n and Schottky-barrier photodiodes. We propose the non-stationary drift-diffusion models, an original numerical simulation technique and the applied software allowing one to simulate the photosensitive devices with different electrophysical, constructive and technological parameters. We have taken into account different kinds of carrier generation and recombination processes, the effects of electron intervalley transition and carrier drift velocity saturation in order to improve the simulation results' adequacy. We have concluded that the influence of these effects on the performance of photodetectors for on-chip optical interconnections is significant. The response time of GaAs p-i-n and Schottky-barrier photodiodes calculated taking into account the drift velocity dependence on electric field intensity is insufficient for the adequate detection of subpicosecond laser pulses. According to the simulation results, it is reasonable to develop the methods aimed at the increase in the drift velocity of charge carriers in the photodetector active region by means of built-in electric field reduction.

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“…• the Shockley-Read-Hall model of the carrier trap recombination applicable for the regions with impurity conductivity [32]:…”

Section: Models and Simulation Methodsmentioning

confidence: 99%

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Pisarenko

Ryndin

2016

Electronics

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“…In addition, results obtained by a commercial device simulator (DESSIS [24]) using default models and parameters are included for comparison. Using the model for the InP/InGaAs/InGaAsP/InP HBT given in [1], the following study is performed. In this device, the In 0.53 Ga 0.…”

Section: Selected Results Of Industriallymentioning

confidence: 99%

“…III-V semiconductors and SiGe are known to have a reduced heat conduc-tivity in comparison with silicon [1]. Thus self-heating effects must be accounted for considering the substrate thermal conductivity [20].…”

Section: Critical Modeling Issues Formentioning

confidence: 99%

“…Advanced device simulation allows a precise physicsbased extraction of small-signal parameters [1]. Measured bias-dependent S-parameters serve as a valuable source of information when compared at different bias points to simulated S-parameters from a device simulator.…”

Section: Critical Modeling Issues Formentioning

confidence: 99%

“…Communication and information systems are subject to rapid development, where semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transistors (HEMTs), are among the fastest and most advanced high-frequency devices [1]. They meet well the requirements for low power consumption, medium-scale integration, low cost in large quantities, and high-speed operation capabilities in circuits in the very high frequency range (recently beyond 500 GHz [2]) and for data rates higher than 100 Gbit/s for long range communication.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of high speed heterostructure devices

Palankovski¹,

Selberherr²

2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)

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Abstract-We present a review of industrial heterostructure devices based on SiGe/Si and III-V compound semiconductors analyzed by means of numerical simulation. The work includes a comparison of device simulators and current transport models to be used, and addresses critical modeling issues. Results from twodimensional hydrodynamic analyses of Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transistors (HEMTs) with Minimos-NT are presented in good agreement with measured data. The examples are chosen to demonstrate technologically relevant issues which can be addressed by device simulation.

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2022

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Analysis and Simulation of Heterostructure Devices

Cited by 160 publications

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Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Analysis of high speed heterostructure devices

Radiation Detectors with Semiconductor Absorbers

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