Analysis and simulation of Au/InSb/InP diode C–V characteristic: modeling and experiments

The C–V–f and G/ω–V–f characteristics of Al/SiO2/p-Si (MIS) structures

“…2(a) and (b), the measured C and G/x in depletion region decrease with increasing frequency in the frequency range of 1 kHz to 1 MHz. This behavior is attributed to the presence of a continuous distribution of N ss , which leads to a progressive decrease of the response of the N ss to the applied alternating-current voltage [5,13,20,[27][28][29].…”

Studies on electrical and the dielectric properties in MS structures

“…As seen in Table 1 Table 1 The values of various experimental parameters of MS structure obtained from C to V and G/x-V characteristics at various frequencies at room temperature [33][34][35][36]. It is clearly seen that the values of N SS is lower than literatures, this is because the values of capacitance and conductance are low.…”

Structural and frequency dependencies of a.c. and dielectric characterizations of epitaxial InSb-based heterojunctions

“…They have obtained a high-quality Schottky-type contact with elevated barrier height values of about 0.63 eV. Moreover, Akkal et al [8] have performed the characterization of the interface states in Au/heated InSb/InP(100) Schottky diode and the determination of the energy density distribution and relaxation time of the interface. They also calculated the density of interface states and relaxation time using capacitance measured at different frequencies.…”