Analysis and simulation of AlGaN/GaN Single Quantum Well Transistor Laser in ultra-violet band

Hakkari, Behzad; Mojaver, Hassan Rahbardar; Kaatuzian, Hassan

doi:10.1109/iraniancee.2014.6999583

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2019

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…12,14 Despite this large number of reports, there are very few simulation investigations that show the effect of electric field in such quantum structures. 15,16 Therefore, the main objective of this simulation work is to systematically study the effect of electric field in the transition energy of the QWs while varying the electric field in a particular range, the QW thickness, the composition of Al and the barrier thickness.…”

Section: Introductionmentioning

confidence: 99%

Simulation Study of GaN/Al1-xGaxN Quantum Well (QW) Operating in the UV Region

Rashid¹,

Mamun²,

Sadek³

et al. 2019

JPS

View full text Add to dashboard Cite

This study describes the characteristics of GaN/Al 1-x Ga x N quantum well (QW) operating in the UV region by varying different parameters. It is well known that the spontaneous and piezoelectric polarisations in wurtzite nitride heterostructures give rise to large built-in electric fields, which leads to an important consequence in the optical properties of GaN/Al 1-x Ga x N quantum wells. We first modelled the effect of electric field on the calculated electronic band structure. The increase in electric field affected the band structure for a fixed QW and barrier thickness. Then we investigated the effect of QW thickness on the bandgap energy for different electric fields. Afterwards, the Al composition (1-x) and Al 1-x Ga x N barrier thickness are varied for different well thickness with a fixed electric field.

show abstract