Abstract:This study describes the characteristics of GaN/Al 1-x Ga x N quantum well (QW) operating in the UV region by varying different parameters. It is well known that the spontaneous and piezoelectric polarisations in wurtzite nitride heterostructures give rise to large built-in electric fields, which leads to an important consequence in the optical properties of GaN/Al 1-x Ga x N quantum wells. We first modelled the effect of electric field on the calculated electronic band structure. The increase in electric fiel… Show more
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