Analysis and refinement of mathematical tools for modified time-of-flight method

Vikhrov, S. P.; Vishnyakov, N. V.; Maslov, A. A.; Mishustin, V. G.

doi:10.1134/1.1469189

Cited by 3 publications

(1 citation statement)

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“…In this case, the field will be concentrated in the gap of the double electric layer, i. e., inside the depletion layer. Moreover, the width of the depletion layer in amorphous silicon depends not only on the bias voltage but also on the concentration of deep and shallow traps of the donor and acceptor types [9]. The mathematical model describing all the mentioned contributions to the potential barrier would allow making quantitative estimations and form a clear view of both the reasons for the barrier height reduction and…”

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confidence: 99%

Schottky barrier in Si-M structures of solid-state lithium-ion batteries

Rudy

Мироненко

Наумов

et al. 2022

Technical Physics Letters

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The results of measuring the charge-discharge characteristics of solid-state thin-film lithium-ion batteries with a nanocomposite anode based on the a-Si(Al) solid solution are presented. The charging characteristics of batteries have a feature in the form of a step on the gentle branch of the U(t) curve. It has been suggested and substantiated that the appearance of the step is related to the gradual compensation and change of the a-Si(Al) hole conductivity to electronic one as the lithium concentration increases. As a result, the a-Si(Al)|Ti ohmic contact becomes rectifying, and the electrons participating in the Faraday process have to overcome the Schottky barrier. The potential growth required to maintain the galvanostatic charge regime manifests itself as a step on the charge curve. Keywords: thin film solid-state lithium-ion battery, amorphous silicon, solid solution, sp3 hybridization, lithiation, Schottky barrier.

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confidence: 99%