Analysis and Experimental Test of Electrical Characteristics on Bonding Wire

Tian, Wenchao; Cui, Haichao; Yu, Wenbo

doi:10.3390/electronics8030365

Cited by 14 publications

(4 citation statements)

References 15 publications

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“…The measured S 11 values are higher than the simulated ones. This may be due to soldering or fabrication tolerances [24]. The measured S 11 values range from −15 dB to −21 dB which falls under a generous range for a radiating patch antenna, according to various literatures [3,14,19].…”

Section: Resultsmentioning

confidence: 82%

A Compact Dual Asymmetric L-Slot Frequency Reconfigurable Microstrip Patch Antenna

Saikia¹,

Dutta²,

Borah³

2021

PIER C

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A frequency reconfigurable microstrip patch antenna with two asymmetric L-slots is proposed in this article. Two RF pin diodes inserted on the asymmetric L-slots are used to switch the operating frequency over the C band. Design and optimization of different physical parameters of the antenna viz. slot dimensions, feed location, notch size, and pin diode positions are carried out using High Frequency Structure Simulator Version 13.0. The design is implemented on an FR4 substrate (ε r = 4.4) of dimension (35 × 40 × 1.6) mm 3 . DC bias circuitry for RF PIN diode activation is also integrated with the antenna. Switching combinations of two PIN diodes offer four reconfiguration modes of operation at 4. 75, 5.05, 5.11, and 5.18 GHz. In all the states, the −10 dB bandwidth shows minimal changes with average variations of 15.8% with respect to the state when both PIN diodes are OFF. The gains of the antenna for different modes of operation are found almost stable with an average of 6.64 dBi.

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Section: Resultsmentioning

confidence: 82%

A Compact Dual Asymmetric L-Slot Frequency Reconfigurable Microstrip Patch Antenna

Saikia¹,

Dutta²,

Borah³

2021

PIER C

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“…Growing demand for emerging technology such as 5G, IoT, VR, cloud computing and metaverse has motivated the microelectronic industries to pursue device integration and advanced packaging technology because it enables devices with far higher interconnect density, higher power and smaller form factors which are ideal for the application of the complex functions [ 1 , 2 ]. The concerns are mostly related to the failure of the solder joint under high current stress.…”

Section: Introductionmentioning

confidence: 99%

The Study of the Reliability of Complex Components during the Electromigration Process

et al. 2023

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With the increasing number of inputs and outputs, and the decreasing interconnection spacing, electrical interconnection failures caused by electromigration (EM) have attracted more and more attention. The electromigration reliability and failure mechanism of complex components were studied in this paper. The failure mechanism and reliability of complex components during the electromigration process were studied through the simulation and the experiment, which can overcome the limitation of experimental measurement at a micro-scale. The simulation results indicated that the solder joint has obvious current crowding at the current inlet, which will significantly enhance the electromigration effect. Based on the atomic flux divergence method, the void formation of solder joints can be effectively predicted, and life prediction can be more accurate than Black’s equation. Experimental results indicated that the resistance of the daisy chain could be significantly increased with the process of void formation in the solder and corrosion of the leads. Moreover, the growth of intermetallic compounds can be obviously promoted under current stress. The main composition of the intermetallic compounds changes from almost entirely Cu5Sn6 to Cu5Sn6 and Cu3Sn; the cracks can be detected at the Cu3Sn layer. Specifically, the mean time to failure is 1065 h under 1.4 A current and 125 °C based on IPC-9701A guidelines.

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“…The reasons for bonding failure are multifaceted and complex. Tian et al [6] analyzed the influence of wire bonding parameters, including flat length ratio, diameter, span and 4 These authors contribute equally to this work. * Authors to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Fatigue life evaluation of gold wire bonding solder joints in MEMS pressure sensors

Zhang

Shen

et al. 2022

J. Micromech. Microeng.

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The failure of the gold wire bonding solder joint of a MEMS pressure sensor caused by the thermal cycling test was investigated with thermal cycling experiments and fatigue simulations. The results show that the maximum stress and strain occurred at the root of the solder joint on the substrate. With the accumulation of strain caused by thermal cycles, the bonding area of solder joint became smaller and the shear force of solder joints reduced to 22.3% after 1600 thermal cycles. The solder joints on the substrate failed after 1940 thermal cycles in plastic fatigue simulations and 3.16×108 thermal cycles in creep fatigue simulations. Plastic fatigue is the major factor for thermal failure of gold wire bonding.

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Analysis and Experimental Test of Electrical Characteristics on Bonding Wire

Cited by 14 publications

References 15 publications

A Compact Dual Asymmetric L-Slot Frequency Reconfigurable Microstrip Patch Antenna

A Compact Dual Asymmetric L-Slot Frequency Reconfigurable Microstrip Patch Antenna

The Study of the Reliability of Complex Components during the Electromigration Process

Fatigue life evaluation of gold wire bonding solder joints in MEMS pressure sensors

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