Analysis and design of the Class E frequency multipliers with RF choke

Albulet, Mihai

doi:10.1109/81.372849

Cited by 21 publications

(8 citation statements)

References 10 publications

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“…4 shows a circuit topology of the proposed oscillator, which is composed of the main circuit and the injection circuit. The main circuit is the free-running class-E oscillator and the injection circuit is the class-E frequency doubler [22]- [24]. The nominal waveforms of the proposed oscillator are shown in Fig.…”

Section: A Class-e Oscillatormentioning

confidence: 99%

Design of Class-E$_{\rm M}$ Oscillator With Second Harmonic Injection

Miyahara

Wei

Nagashima

et al. 2012

IEEE Trans. Circuits Syst. I

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This paper presents the class-E oscillator with the second-harmonic injection current, along with its design procedure, design curves, and design example. In the proposed oscillator, the output frequency of the proposed oscillator is locked with the input frequency of the injection circuit. Additionally, the switch-voltage and switch-current waveforms in the main circuit achieve the class-E zero-voltage switching, zero-voltage-derivative switching, zero-current switching, and zero-current-derivative switching (ZVS/ZVDS/ZCS/ZCDS) conditions and the switch voltage waveform in the injection circuit satisfied the class-E ZVS/ZDS conditions. In the laboratory experiment, the oscillator achieved 92.0% power-conversion efficiency at 34.8 W output power and 1 MHz operating frequency. The experimental results agreed with the numerical predictions quantitatively, which denotes the validity of the design procedure.

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Section: A Class-e Oscillatormentioning

confidence: 99%

Design of Class-E$_{\rm M}$ Oscillator With Second Harmonic Injection

Miyahara

Wei

Nagashima

et al. 2012

IEEE Trans. Circuits Syst. I

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“…The conduction angle gives the proportion of an AC cycle, which the output devices conduct [ 13 ]. The quiescent DC operating point (Q-point) of an amplifier defines the amplifier class.…”

Section: Power Amplifiers For Transcutaneous Applicationsmentioning

confidence: 99%

Automatic Frequency Controller for Power Amplifiers Used in Bio-Implanted Applications: Issues and Challenges

Hannan

Hussein

Mutashar

et al. 2014

Sensors

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With the development of communication technologies, the use of wireless systems in biomedical implanted devices has become very useful. Bio-implantable devices are electronic devices which are used for treatment and monitoring brain implants, pacemakers, cochlear implants, retinal implants and so on. The inductive coupling link is used to transmit power and data between the primary and secondary sides of the biomedical implanted system, in which efficient power amplifier is very much needed to ensure the best data transmission rates and low power losses. However, the efficiency of the implanted devices depends on the circuit design, controller, load variation, changes of radio frequency coil's mutual displacement and coupling coefficients. This paper provides a comprehensive survey on various power amplifier classes and their characteristics, efficiency and controller techniques that have been used in bio-implants. The automatic frequency controller used in biomedical implants such as gate drive switching control, closed loop power control, voltage controlled oscillator, capacitor control and microcontroller frequency control have been explained. Most of these techniques keep the resonance frequency stable in transcutaneous power transfer between the external coil and the coil implanted inside the body. Detailed information including carrier frequency, power efficiency, coils displacement, power consumption, supplied voltage and CMOS chip for the controllers techniques are investigated and summarized in the provided tables. From the rigorous review, it is observed that the existing automatic frequency controller technologies are more or less can capable of performing well in the implant devices; however, the systems are still not up to the mark. Accordingly, current challenges and problems of the typical automatic frequency controller techniques for power amplifiers are illustrated, with a brief suggestions and discussion section concerning the progress of implanted device research in the future. This review will hopefully lead to increasing efforts towards the development of low powered, highly efficient, high data rate and reliable automatic frequency controllers for implanted devices.

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“…(4) The switch on-resistance is zero and the switch off-resistance is infinite, and the switch action is lossless. (5) The power loss only occurs on load resistance.…”

Section: Circuit Assumptionsmentioning

confidence: 99%

“…The switch-mode power amplifier, especially Class-E PA, whose ideal efficiency reaches 100%, can be a good way to solve the problem above. Sokal and Sokal [1] proposed a structure of Class-E PA and then Rabb [2] analysed the performance of Class-E PA. Based on the current research direction of Class-E PA, it can be divided into two categories: Class-E PA with RF choke [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] and Class-E PA with finite dc feed (FDC) inductor [19][20][21][22][23][24][25]. From the point of view on the switch voltage, Class-E PA has three operating modes: non-zero-voltage switching (non-ZVS), suboptimal operation [ZVS and non-zero-voltage derivative switching (non-ZDS)] and optimal operation (ZVS and ZDS) [1,2].…”

Section: Introductionmentioning

confidence: 99%

“…It can be seen that the optimal case has been researched well. Design and performance curves were given and discussed for the case of the RF choke, shunt capacitor and series‐tuned configuration in [5]. Albulet and Zulinski [6] analysed the effects of the transistor duty ratio on the design values and performance of Class‐E PA at various given values of the output network Q in as well.…”

Section: Introductionmentioning

confidence: 99%

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‘New’ solutions of Class‐E power amplifier with finite dc feed inductor at any duty ratio

Nan

Chen

et al. 2014

IET Circuits, Devices & Systems

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'New' Class-E solutions are proposed by varying three different design parameters which are introduced in the voltage and current equations in order to extend the Class-E 'design space', of which the 'new' solutions can apply to optimal and suboptimal operation. The design procedure of suboptimal Class-E power amplifier (PA) is analysed in details and then a suboptimal Class-E PA based on GaN HEMT CGH40010F is designed to prove the correctness of the 'new' solutions. The measured maximum output power of 39.6 dB, power-added-efficiency of 74.7% and drain efficiency of 78.9% were obtained at 2.6 GHz with a 28 dBm input power. These measurement results show that a similar or better level of efficiency and output power that are reported for optimal Class-E PAs at lower frequencies using the same transistor, and the presented 'new' solutions extend the 'design space' of Class-E PA. This paper give engineers more degrees of freedom to design Class-E PA.

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Analysis and design of the Class E frequency multipliers with RF choke

Cited by 21 publications

References 10 publications

Design of Class-E$_{\rm M}$ Oscillator With Second Harmonic Injection

Design of Class-E$_{\rm M}$ Oscillator With Second Harmonic Injection

Automatic Frequency Controller for Power Amplifiers Used in Bio-Implanted Applications: Issues and Challenges

‘New’ solutions of Class‐E power amplifier with finite dc feed inductor at any duty ratio

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