‘New’ solutions of Class‐E power amplifier with finite dc feed inductor at any duty ratio

Du, Xuekun; Nan, Jingchang; Chen, Wenhua; Shao, Zhenhai

doi:10.1049/iet-cds.2013.0405

Cited by 16 publications

(10 citation statements)

References 30 publications

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“…Meanwhile, since the PAs strongly influence the overall system power consumption, one of the major challenges is to design the high-efficiency PAs [4]. Recent years, various efficiency improvement strategies of PAs have been proposed, such as class-E [5][6][7], class-F [8][9][10], class-EF [11][12][13], and so on. Among them, class-E PAs have become very popular in the RF front-end due to its simplicity and high-efficiency.…”

Section: Introductionmentioning

confidence: 99%

High-efficiency concurrent dual-band class-E power amplifier with extended maximum operating frequency

Zeng

Huang

2019

IEICE Electron. Express

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This paper presents a method for designing high-efficiency concurrent dual-band (DB) class-E power amplifier (PA) that operate above the theoretical maximum frequency (fmax). The excess output capacitances at the two desired frequencies can be compensated using the proposed output matching network without separate design of harmonic compensation network, thus the fundamental and harmonic impedances for DB optimum class-E operation are achieved above the fmax, considering the parasitics of the packaged transistor. For demonstration, the fabricated DB class-E PA using GaN HEMT features the maximum power-added efficiency (PAE) of 74.1% and 72.6% at 1.9 and 2.5 GHz, while the output power is 40.3 and 40.7 dBm, respectively.

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Section: Introductionmentioning

confidence: 99%

High-efficiency concurrent dual-band class-E power amplifier with extended maximum operating frequency

Zeng

Huang

2019

IEICE Electron. Express

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“…Harmonic‐tuned amplifiers such as class‐F and class‐J power amplifiers (PAs) and switch‐mode amplifiers such as class‐E PAs constitute the main categories of high‐efficiency PAs . With properly designed harmonic load impedances, they can offer high‐efficiency performance owing to reduced transistor loss …”

Section: Introductionmentioning

confidence: 99%

Extended theoretical analysis method on the performance of high-efficiency power amplifiers by solving nonlinear waveform determination process

You

Huang

2016

Int J RF Microw Comput Aided Eng

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Classical analysis of high‐efficiency power amplifiers (PA) is usually based on ideal voltage and current waveforms limited to optimal states. A transistor's nonlinear I‐V curves are not usually taken into consideration because of their complexity. With a computer‐aided calculation tool developed herein, a direct waveform determination method involving nonlinear I‐V curves is realized. Using this approach and simplified I‐V curves, a PA's extended theoretical performance from the back‐off region to saturation can be investigated. If using practical dc I‐V curves, this method can also give good performance analysis results even at microwave frequency. Numerical examples of different PA settings are given to verify this method. Nonlinear calculations, harmonic balance simulations, and measurements of a class‐E PA operating at 3 GHz are shown with consistent results to prove this waveform determination method.

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“…For example, the shunt intrinsic capacitance (C ds ) of the MOSFET is considered nonlinear, and the grading coefficient is taken into account as a new parameter in class E amplifier design [7][8]. Besides, input voltage duty cycle is considered to analyse the class E PA in [9][10][11]. Varying input voltage duty cycle leads to change in the class E PA specifications.…”

Section: Introductionmentioning

confidence: 99%

A Reduced Switch Voltage Stress Class E Power Amplifier Using Harmonic Control Network

Zirak¹,

Roshani²

2016

ijacsa

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Abstract-In this paper, a harmonic control network (HCN)is presented to reduce the voltage stress (maximum MOSFET voltage) of the class E power amplifier (PA). Effects of the HCN on the amplifier specifications are investigated. The results show that the proposed HCN affects several specifications of the amplifier, such as drain voltage, switch current, output power capability (C p factor), and drain impedance. The output power capability of the presented amplifier is also improved, compared with the conventional class E structure. High-voltage stress limits the design specifications of the desired amplifier. Therefore, several limitations can be removed with the reduced switch voltage. According to the results, the maximum drain voltage for the presented amplifier is reduced and subsequently, the output power capability is increased about 25% using the presented structure. Zero-voltage switching condition (ZVS) and zerovoltage derivative switching condition (ZVDS) are assumed in the design procedure. These two conditions are essential for high efficiency achievement in various classes of switching amplifiers. A class E PA with operating frequency of 1 MHz is designed and simulated using advanced design system (ADS) and PSpice software. The theory and simulated results are in good agreement.

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‘New’ solutions of Class‐E power amplifier with finite dc feed inductor at any duty ratio

Cited by 16 publications

References 30 publications

High-efficiency concurrent dual-band class-E power amplifier with extended maximum operating frequency

High-efficiency concurrent dual-band class-E power amplifier with extended maximum operating frequency

Extended theoretical analysis method on the performance of high-efficiency power amplifiers by solving nonlinear waveform determination process

A Reduced Switch Voltage Stress Class E Power Amplifier Using Harmonic Control Network

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