2017
DOI: 10.1109/jetcas.2016.2616723
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Analogue Frontend Amplifiers for Bio-Potential Measurements Manufactured With a-IGZO TFTs on Flexible Substrate

Abstract: Three novel differential amplifier topologies using double gate a-IGZO TFTs on flexible substrate are presented in this paper. The designs exploit positive feedback and a load with self-biased top gate to achieve the highest static gain in single stage a-IGZO amplifiers reported to date. After fabrication, the three amplifiers exhibit respectively a static gain of 14 dB, 21.5 dB and 30 dB, with a bandwidth of 2 kHz, 400 Hz, and 150 Hz. Also, for each circuit the input referred noise has been measured to be 420… Show more

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Cited by 40 publications
(28 citation statements)
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“…Integrated sense amplifiers are beneficial for reading out different memory topologies in a rapid fashion, from LPROM to static random-access memory 52 , and in future could be used in non-volatile memory arrays embedded in TFT technologies. Large-area imaging backplanes require in-pixel 53 . The back-gate is capable of not only enabling multi-threshold voltage logic (as discussed earlier), but also improving the transconductance or the output resistance of the individual transistors.…”
Section: Analogue Circuitsmentioning
confidence: 99%
“…Integrated sense amplifiers are beneficial for reading out different memory topologies in a rapid fashion, from LPROM to static random-access memory 52 , and in future could be used in non-volatile memory arrays embedded in TFT technologies. Large-area imaging backplanes require in-pixel 53 . The back-gate is capable of not only enabling multi-threshold voltage logic (as discussed earlier), but also improving the transconductance or the output resistance of the individual transistors.…”
Section: Analogue Circuitsmentioning
confidence: 99%
“…As in single-ended amplifiers, the performance of differential amplifiers can be improved using a dual-gate device structure. Novel single-stage differential amplifier architectures, based on dual-gate metal-oxide TFTs, were demonstrated by Garripoli et al [133]. Significant improvement of DC gain was achieved via positive feedback and enhanced-source degenerated loads.…”
Section: Unipolar Differential Amplifiersmentioning
confidence: 99%
“…Additionally, in order to increase the output resistance and thus the DC gain, Garripoli et al replaced the standard diode-connected load with a new load topology realised with a stack of three diode-connected transistors (M 7 -M 5 -M 3 and M 8 -M 6 -M 4 ) with a peculiar interconnection of the second gate electrodes (Figure 3.4d) [133]. The load output resistance at node A (a similar argument applies to node B) is dependent on the threshold modulation coefficient η (see Chapter 2), and its expression reads:…”
Section: Unipolar Differential Amplifiersmentioning
confidence: 99%
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