Analog and radio-frequency performance analysis of silicon-nanotube MOSFETs

Abstract

This work presents a comparative study of the influence of various parameters on the analog and RF properties of silicon-nanotube MOSFETs and nanowire-based gate-all-around (GAA) MOSFETs. The important analog and RF performance parameters of SiNT FETs and GAA MOSFETs, namely drain current (Id), transconductance to drain current ratio (gm/Id), Ion/Ioff, the cut-off frequency (fT) and the maximum frequency of oscillation (fMAX) are evaluated with the help of Y- and H-parameters which are obtained from a 3-D device simulator, ATLAS™. It is found that the silicon-nanotube MOSFETs have far more superior analog and RF characteristics (gm/Id, fT and fMAX) compared to the nanowire-based gate-all-around GAA MOSFETs. The silicon-nanotube MOSFET shows an improvement of ∼2.5 and 3 times in the case of fT and fMAX values respectively compared with the nanowire-based gate-all-around (GAA) MOSFET.

An online comprehensive health monitoring system for automotive auxiliary converter

“…The degraded on-resistance will also lower the overall conversion efficiency of the converter and produce more quantity of heat. The monitoring of on-resistance mainly depends on the terminal voltage and current of the semiconductor [34].…”

The influences of radiation effects on DC/RF performances of L g = 22 nm gate-all-around nanosheet field-effect transistor

“…As compared to FinFET or SOI technologies, some studies implied that GAAFETs may have superior RF performance than either of the FinFET or SOI technologies. Although there are very few experimental results to support this claim, the simulations can still reveal that the f T of GAAFETs has the potential to reach the Tera Hertz region [15][16][17][18].…”

Study on Analog/RF and Linearity Performance of Staggered Heterojunction Gate Stack Tunnel FET

“…Higher on state current and lower subthreshold off state current are the attractive features of TFETs made up off III-V group materials due to band edge alignment and lower tunnelling mass. 15 The reduction in effective bandgap is the reason for increase in I ON current in staggered heterostructure TFET. 16 As per the composition of material used in source/drain As-Sb based staggered heterojunction TFET offers band alignment resulting in steeper band structure.…”