An XPS study of the early stages of silver photodiffusion in Ag/a-As2S3 films

Jain, Himanshu; Kovalskiy, A.; Miller, A. C.

doi:10.1016/j.jnoncrysol.2005.11.044

Cited by 38 publications

(22 citation statements)

References 28 publications

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“…The binding energy of this peak is at 368.1 eV and does not change during irradiation. This finding is similar to that of Kovalskiy et al for Ag dissolution in As 2 S 3 films [17]. The lack of binding energy shift at the Ag3d peak during irradiation can be attributed to the fact that al- ready at the beginning of the irradiation, silver on top of the chalcogenide film is not in a purely metallic state.…”

Section: Resultssupporting

confidence: 90%

Ag diffusion in amorphous As50Se50 films studied by XPS

Kalyva¹,

Siokou²,

Yannopoulos³

et al. 2009

Journal of Non-Crystalline Solids

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Section: Resultssupporting

confidence: 90%

Ag diffusion in amorphous As50Se50 films studied by XPS

Kalyva¹,

Siokou²,

Yannopoulos³

et al. 2009

Journal of Non-Crystalline Solids

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“…The As 3d 5/2 major peak (75 % of all As atoms) appears at 42.5 eV, and that of S 2p 3/2 (78 % of S atoms) at 161.7 eV. These positions slightly differ from the binding energies published in some of our previous papers where gold reference was not used [9,13]. Here, we have made corrections using more reliable and precise referencing to Au 4f 7/2 (at 84.0 eV).…”

Section: Ag/as 40 S 60 Bilayercontrasting

confidence: 65%

“…part of Ag has diffused into the As 2 S 3 film under the influence of the X-rays of XPS spectrometer. However, based on our previous experience [9], under the conditions used here, X-ray exposure is not expected to affect the structure of As 40 S 60 films or Ag/As 40 S 60 bilayers that have been already exposed to visible light. The structure of As 3d peak for Ag/As 40 S 60 bilayer differs from the one for As 40 S 60 as it contains two As 3d 5/2 components: one at 41.9 eV which is the same as for As 40 S 60 without Ag, and a new component at 43.8 eV.…”

Section: Ag/as 40 S 60 Bilayermentioning

confidence: 86%

“…High resolution X-ray photoelectron spectroscopy (XPS) is one of the most effective methods to examine the changes in chemical composition and electronic structure of the materials, which can be utilized also for photodiffusion studies. In our previous work [9,10], we investigated the mechanism of Ag photodiffusion into arsenic and germanium-based films that were thermally deposited within the vacuum of XPS spectrometer. Thus those samples never came in contact with air, and any potential interference of oxygen in the photodiffusion process was expressly avoided; the results focused simply on the well-defined interaction of Ag with glass matrix.…”

Section: Introductionmentioning

confidence: 99%

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Evolution of chemical structure during silver photodiffusion into chalcogenide glass thin films

Kovalskiy¹,

Jain²,

Mitkova³

2009

Journal of Non-Crystalline Solids

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This is an author-produced, peer-reviewed version of this article. AbstractThe change of chemical structure resulting after X-ray and photo-induced silver diffusion into chalcogenide glass (ChG) thin films is monitored by high resolution X-ray photoelectron spectroscopy (XPS). As 40 S 60 and Ge 30 Se 70 thin films, which are based on pyramids and tetrahedral structural units, are investigated as model materials. Survey, core level (As 3d, S 2p, Ge 3d, Ge 2p, Se 3d, Ag 3d 5/2 , O 1s, C 1s) and valence band spectra have been recorded and analyzed. Reference point for the binding energy is established by the subsequent deposition of thin gold film on top of the measured samples. The chemical structure gradually changes during diffusion of silver in all the samples. The mechanism of change depends on the chemical composition, thickness of the diffused silver layer and conditions of irradiation. It is revealed that surface oxygen can play important role in the Ag photodiffusion process, leading to phase separation on the surface of the films. Photodiffusion of Ag into As 40 S 60 film leads to the formation of a uniform ternary phase and arsenic oxides on the surface. The formation of ethane-like Ge 2 (S 1/2 ) 6 units together with germanium oxidation are the main outcomes of X-ray induced Ag diffusion into Ge 30 Se 70 film.

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“…Many investigators [4][5][6][7][8][9][10][11][12][13][14] have tried to explain the mechanism of silver doping and the structure of chalcogenide glasses, but the basic understanding is still incomplete. Although most of the reported work on dissolution of Ag in chalcogenide semiconductors is with thin films [8,9], but few investigators have reported this phenomenon on bulk glasses as well [8,10,[12][13][14]. The paper reports the measurements of complex impedance parameters over a wide range of frequency and temperature for both doped and undoped samples of Sb 2 Se 3 .…”

Section: Introductionmentioning

confidence: 99%

Effect of silver doping on the electrical properties of a-Sb2Se3

Gautam

Thakur

Tripathi

et al. 2007

Journal of Non-Crystalline Solids

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This paper reports the effect of Ag-doping on electrical properties of a-Sb 2 Se 3 in the temperature range 230-340 K and frequency range 5-100 kHz. The variation of transport properties with thermal doping has been studied. Ag-doping produces two homogeneous phases in the sample, which are found to be voltage dependent in the temperature range studied and frequency dependent in lower frequency region (0.1-10 kHz). Activation energy E g and C 0 [= r 0 exp (c/k), where c, is the temperature coefficient of the band gap] calculated from dc conductivity has been found to vary from (0.42 ± 0.01) eV to (0.26 ± 0.01) eV and (4.11 ± 0.01) · 10 À5 to (2.90 ± 0.02) · 10 À6 X À1 cm À1 respectively. Ag-doping can be used to make the sample useful in device applications.

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An XPS study of the early stages of silver photodiffusion in Ag/a-As2S3 films

Cited by 38 publications

References 28 publications

Ag diffusion in amorphous As50Se50 films studied by XPS

Ag diffusion in amorphous As50Se50 films studied by XPS

Evolution of chemical structure during silver photodiffusion into chalcogenide glass thin films

Effect of silver doping on the electrical properties of a-Sb2Se3

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