Ag diffusion in amorphous As50Se50 films studied by XPS

Synchrotron radiation photoelectron spectroscopy studies of self-organization in As40Se60 nanolayers stored under ambient conditions and after laser irradiation

“…On the other hand, we have not detected a contribution of oxidized arsenic (As 2 O 3 ) in the experimental As 3d peak for this sample. Such a contribution is expected when an As-rich sample is exposed to air [39]. The changes of the surface composition of the chalcogenide film and its stability in the bulk were supported by our previous studies of Auger spectra of a complex Ge 33 As 12 Se 55 film [40] where losses of As accompanied by the enrichment of Ge and Se in the near surface layers were observed.…”

“…Therefore, under laser irradiation in air the photoinduced structural changes in the bulk already described in detail [36,39] are totally different from the surface processes which cause significant changes of surface stoichiometry and bonding properties. The latter processes are schematically shown in our atomic model of structural changes of the As 40 Se 60 nanolayers surface (Fig.…”

Application of photoelectron spectroscopy methods for investigation of subsurface layers of amorphous chalcogenide materials

“…4. As 3d та Se 3d спектри аморфних плівок As, Se, As2Se3 та фотолегованої Ag плівки As2Se3 [16] Протягом останніх тридцяти років методом рентгенівської фотоелектронної спектроскопії досліджені двохкомпонентні халькогенідні стекла систем As-S [18,[20][21][22][23][24][25], As-Se [26][27][28][29][30][31][32], Ge-S [33], Ge-Se [34][35] Рис. 8.…”

Soft x-ray induced Ag diffusion in amorphous pulse laser deposited As50Se50 thin films: An x-ray photoelectron and secondary ion mass spectroscopy study

“…24 It was shown that a mixed interfacial layer consisting of As-Se-Ag intermediate species is formed before irradiation between the silver layer and the chalcogenide matrix. Since x rays are used here with the dual purpose of measuring and irradiating at the same time, it is not possible to say at this stage whether this layer was formed before or after the beginning of the irradiation procedure.…”