2020
DOI: 10.1039/c9nr10348a
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An ultrasensitive self-driven broadband photodetector based on a 2D-WS2/GaAs type-II Zener heterojunction

Abstract: A self-driven photodetector based on WS2/GaAs type-II Zener heterojunction is fabricated, which shows a broadband response spectrum from 200 to 1550 nm beyond the limitation of the bandgaps with a high responsivity and specific detectivity.

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Cited by 69 publications
(39 citation statements)
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“…Noticeably, the vibration modes of the overlapped Te are weakened. Interestingly, both vibration modes of WS 2 are enhanced compared to that in single part, which may be attributed to the strain effect [40]. Fig.…”
Section: Resultsmentioning
confidence: 85%
“…Noticeably, the vibration modes of the overlapped Te are weakened. Interestingly, both vibration modes of WS 2 are enhanced compared to that in single part, which may be attributed to the strain effect [40]. Fig.…”
Section: Resultsmentioning
confidence: 85%
“…However, it is still challenge to fabricate high responsivity 2D material-based photodetectors along with ultrafast response. Although group-6 TMDCs (such as MoS 2 and WS 2 ) have exhibited impressive optoelectronic properties [156][157][158], their photodetection performance is severely limited due to their relatively large band gap and low carrier mobility, especially in the IR range.…”
Section: Photodetectorsmentioning
confidence: 99%
“…[ 1 ] Broadband photodetectors, which are sensitive to the broad spectrum, are promising for future applications. [ 2–6 ] Most photodetectors need an outer bias as the driving force to prevent the recombination of photogenerated electron–hole pairs. [ 7–8 ] The requirement of outer power makes it challenging for these photodetectors to be applied in many space‐starved or long‐term applications.…”
Section: Introductionmentioning
confidence: 99%