Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI
DOI: 10.1109/asmc.2003.1194483
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An ultra thin nitrided oxide gate dielectric formation by using slot plane antenna plasma

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Cited by 2 publications
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“…nMOS-Capacitors were fabricated on B-doped (100) oriented Si substrate (8)(9)(10)(11)(12). After RCA pre-cleaning, a SiO 2 film ( 16A thick) was thermally grown, and was nitrided by the SPA plasma to form a SiON thin film.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…nMOS-Capacitors were fabricated on B-doped (100) oriented Si substrate (8)(9)(10)(11)(12). After RCA pre-cleaning, a SiO 2 film ( 16A thick) was thermally grown, and was nitrided by the SPA plasma to form a SiON thin film.…”
Section: Methodsmentioning
confidence: 99%
“…To solve these problems, we have developed the slot plane antenna (SPA) plasma nitridation system, [6][7][8] which is based on the original work of the Radial Line Slot Antenna (RLSA) by Ohmi et al 9) In this paper, a systematic study was performed on the SPA plasma nitrided SiON thin films, using SIMS analysis and electrical evaluations of MOS-Capacitor and CMOS-FET.…”
Section: Introductionmentioning
confidence: 99%
“…Piezoceramics are a kind of very important functional materials, which have been applied in every corner of human life and production [1][2][3]. Traditional piezoelectric ceramics are mainly PbZrTiO3 (PZT) based binary and ternary ceramics with a series of excellent properties [4,5].…”
Section: Introductionmentioning
confidence: 99%