2003 5th International Conference on ASIC. Proceedings (IEEE Cat. No.03TH8690)
DOI: 10.1109/issm.2003.1243325
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An ultra-thin ALD TaN barrier for high-performance Cu interconnects

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“…The resistivity of TaN is about a factor of 10 to 100 higher than Cu, depending on the deposition conditions, stoichiometry, and phases . Although subnanometer TaN barriers have been demonstrated by atomic layer deposition (ALD), these films tend to be highly resistive, expensive, and difficult to scale up, and thus are not ideal for use in interconnects. Hence, a monatomic thin layer that effectively blocks diffusion without adding significant resistance is required to further down-size microelectronics. , …”
Section: Introductionmentioning
confidence: 99%
“…The resistivity of TaN is about a factor of 10 to 100 higher than Cu, depending on the deposition conditions, stoichiometry, and phases . Although subnanometer TaN barriers have been demonstrated by atomic layer deposition (ALD), these films tend to be highly resistive, expensive, and difficult to scale up, and thus are not ideal for use in interconnects. Hence, a monatomic thin layer that effectively blocks diffusion without adding significant resistance is required to further down-size microelectronics. , …”
Section: Introductionmentioning
confidence: 99%
“…For example, 10 Å of ALD-TaN, [3] 0.6 nm of PEALD-TaNx, [4] carboxylic acid-, thiol-, and aminoterminated self assembled monolayers [5][6][7][8][9] and molecular layer deposition (MLD). [10][11] However, in those methods, when dielectric has pores whose size id 1.5 to 3 nm, the precursors may diffuse into pores of low-k film.…”
Section: Introductionmentioning
confidence: 99%
“…1) Recently, atomic layer deposition (ALD) was proposed as the barrier deposition method due to its excellent coverage ability, but some issues, such as low throughput and poor reliability, need to be resolved for manufacturing. 2,3) As an alternative barrier material, metal organic chemical vapor deposition (MOCVD) TiSiN was investigated because it can provide good coverage with high throughput and ability of suppressing Cu diffusion. 4) However, a satisfactory EM performance has yet been reported.…”
Section: Introductionmentioning
confidence: 99%