An ultra-thin ALD TaN barrier for high-performance Cu interconnects

Chung, Hsiao Jen; Chang, Mo; Chu, S.S.; Kumar, N.; Goto, Kazuya; Maity, N.; Sankaranarayanan, Sandeep; Okamura, Hiroshi; Ohtsuka, N.; Ogawa, Satoi

doi:10.1109/issm.2003.1243325

Cited by 5 publications

(5 citation statements)

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“…The resistivity of TaN is about a factor of 10 to 100 higher than Cu, depending on the deposition conditions, stoichiometry, and phases . Although subnanometer TaN barriers have been demonstrated by atomic layer deposition (ALD), these films tend to be highly resistive, expensive, and difficult to scale up, and thus are not ideal for use in interconnects. Hence, a monatomic thin layer that effectively blocks diffusion without adding significant resistance is required to further down-size microelectronics. , …”

Section: Introductionmentioning

confidence: 99%

Electronically Transparent Graphene Barriers against Unwanted Doping of Silicon

Wong

Koek

Liu

et al. 2014

ACS Appl. Mater. Interfaces

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Diffusion barriers prevent materials from intermixing (e.g., undesired doping) in electronic devices. Most diffusion barrier materials are often very specific for a certain combination of materials and/or change the energetics of the interface because they are insulating or add to the contact resistances. This paper presents graphene (Gr) as an electronically transparent, without adding significant resistance to the interface, diffusion barrier in metal/semiconductor devices, where Gr prevents Au and Cu from diffusion into the Si, and unintentionally dope the Si. We studied the electronic properties of the n-Si(111)/Gr/M Schottky barriers (with and without Gr and M=Au or Cu) by I(V) measurements and at the nanoscale by ballistic electron emission spectroscopy (BEEM). The layer of Gr does not change the Schottky barrier of these junctions. The Gr barrier was stable at 300 °C for 1 h and prevented the diffusion of Cu into n-Si(111) and the formation of Cu3Si. Thus, we conclude that the Gr is mechanically and chemically stable enough to withstand the harsh fabrication methods typically encountered in clean room processes (e.g., deposition of metals in high vacuum conditions at high temperatures), it is electronically transparent (it does not change the energetics of the Si/Au or Si/Cu Schottky barriers), and effectively prevented diffusion of the Cu or Au into the Si at elevated temperatures and vice versa.

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Section: Introductionmentioning

confidence: 99%

Electronically Transparent Graphene Barriers against Unwanted Doping of Silicon

Wong

Koek

Liu

et al. 2014

ACS Appl. Mater. Interfaces

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“…For example, 10 Å of ALD-TaN, [3] 0.6 nm of PEALD-TaNx, [4] carboxylic acid-, thiol-, and aminoterminated self assembled monolayers [5][6][7][8][9] and molecular layer deposition (MLD). [10][11] However, in those methods, when dielectric has pores whose size id 1.5 to 3 nm, the precursors may diffuse into pores of low-k film.…”

Section: Introductionmentioning

confidence: 99%

Structural Analysis of Pore Seal Layer Fabricated by Wet-process on Porous Low-k Films

et al. 2013

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Pore sealing has become a critical issue for the implementation of porous low-k dielectrics and for realizing acceptable reliability performance of the interconnect. This study focuses on fabrication of ultra-thin, conformal and plasma resistant pore seal layer and on understanding parameters playing a role in sealing the surfaces of porous low-k films. It was found that 2.5 nm-thick pore seal layer shows a perfect toluene seal property for the porous lowk film whose pore radius is 1.48 nm. The pore seal layer still show a good toluene seal property after irradiation of He plasma at 250℃ for 10 sec. The increments of dielectric constant by applying the pore seal layer and by the He plasma irradiation for 10 sec are 0.04 and 0.03, respectively. Interestingly, all of toluene seal property, refractive index of the bottom part of the film and dielectric constant started to deteriorate after irradiation of He plasma for 20 sec. It was suggested that when toluene seal property degrades, plasma would start diffusing into pores and both refractive index of the bottom part of the film and k value start to increase.

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“…1) Recently, atomic layer deposition (ALD) was proposed as the barrier deposition method due to its excellent coverage ability, but some issues, such as low throughput and poor reliability, need to be resolved for manufacturing. 2,3) As an alternative barrier material, metal organic chemical vapor deposition (MOCVD) TiSiN was investigated because it can provide good coverage with high throughput and ability of suppressing Cu diffusion. 4) However, a satisfactory EM performance has yet been reported.…”

Section: Introductionmentioning

confidence: 99%

Selectively Formed Metal Organic Chemical Vapor Deposition TiSiN and Ta Barrier Metal Using Direct Contact Via Process for Sub-65 nm Interconnects

Joo

Lee

Baek

et al. 2007

jjap

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We report integration of metal organic chemical vapor deposition (MOCVD) TiSiN barrier metal into 65 nm low-k dielectric (k=2.9) interconnects. Selective TiSiN barrier was formed along via trench wall using direct contact via (DCV) process and subsequent Ta incorporation into Cu was found to significantly improve electromigration (EM) reliability. Also, a large reduction of 0.1 µm via/line resistances is achieved. The proposed integration method allows MOCVD TiSiN usable as a barrier metal for the nano scale interconnects, taking advantages of high throughput and excellent step coverage of MOCVD process compared to other barrier processes.

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An ultra-thin ALD TaN barrier for high-performance Cu interconnects

Cited by 5 publications

References 0 publications

Electronically Transparent Graphene Barriers against Unwanted Doping of Silicon

Electronically Transparent Graphene Barriers against Unwanted Doping of Silicon

Structural Analysis of Pore Seal Layer Fabricated by Wet-process on Porous Low-k Films

Selectively Formed Metal Organic Chemical Vapor Deposition TiSiN and Ta Barrier Metal Using Direct Contact Via Process for Sub-65 nm Interconnects

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