An ultra-high pressure sensor based on SOI piezoresistive material

et al. 2016

Sensors

The field of piezoresistive sensors has been undergoing a significant revolution in terms of design methodology, material technology and micromachining process. However, the temperature dependence of sensor characteristics remains a hurdle to cross. This review focuses on the issues in thermal-performance instability of piezoresistive sensors. Based on the operation fundamental, inducements to the instability are investigated in detail and correspondingly available ameliorative methods are presented. Pros and cons of each improvement approach are also summarized. Though several schemes have been proposed and put into reality with favorable achievements, the schemes featuring simple implementation and excellent compatibility with existing techniques are still emergently demanded to construct a piezoresistive sensor with excellent comprehensive performance.

Section: Introductionmentioning

confidence: 99%

Thermal-Performance Instability in Piezoresistive Sensors: Inducement and Improvement

Liu

Wang

et al. 2016

Sensors

“…In this area, beams, mass blocks and other solid structures have been widely used as sensing element. As sensing elements, solid structures offer high measurement accuracy and dynamic characteristics [6,7]; however, due to the complexity of the related fabrication processes, the cost of these sensors is often high, and the ability to sustain overload is confined by the physical properties of the microstructures.…”

Section: Introductionmentioning

confidence: 99%

A liquid MEMS inclinometer sensor with improved sensitivity

Sensors and Actuators A: Physical

Zhang

et al. 2019

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“…Its measuring range is 0–1 GPa. Zhao [ 15 ] studied an ultra-high pressure sensor combining a cylindrical elastic body made of the stainless steel of 17-4PH and a micro silicon-on-insulator (SOI) solid piezoresistive chip. Its measuring range is 0–2 GPa.…”

Section: Introductionmentioning

confidence: 99%

Research of a Novel Ultra-High Pressure Sensor with High-Temperature Resistance

Zhang

et al. 2017

Micromachines

Ultra-high pressure measurement has significant applications in various fields such as high pressure synthesis of new materials and ultra-high pressure vessel monitoring. This paper proposes a novel ultra-high pressure sensor combining a truncated-cone structure and a silicon-on-insulator (SOI) piezoresistive element for measuring the pressure up to 1.6 GPa. The truncated-cone structure attenuates the measured pressure to a level that can be detected by the SOI piezoresistive element. Four piezoresistors of the SOI piezoresistive element are placed along specific crystal orientation and configured as a Wheatstone bridge to obtain voltage signals. The sensor has an advantage of high-temperature resistance, in that the structure of the piezoresistive element can avoid the leakage current at high temperature and the truncated-cone structure separates the piezoresistive element from the heat environment. Furthermore, the upper surface diameter of the truncated-cone structure is designed to be 2 mm for the application of small scale. The results of static calibration show that the sensor exhibits a good performance in hysteresis and repeatability. The temperature experiment indicates that the sensor can work steadily at high temperature. This study would provide a better insight to the research of ultra-high pressure sensors with larger range and smaller size.