An rf bridge technique for contactless measurement of the carrier lifetime in silicon wafers

Tiedje, T.; Haberman, Joel I.; Francis, R. W.; Ghosh, Amal K.

doi:10.1063/1.332368

Cited by 38 publications

(14 citation statements)

References 2 publications

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“…6 Surface recombination velocity measurements were performed using a contactless rf conductivity apparatus. 5,[17][18][19][20] In this system, the output from a signal generator operating at 450 MHz was connected to a power splitter. One output from the power splitter was connected through an amplifier and a phase shifter to the local oscillator input of a doublebalanced frequency mixer, and the other output from the power splitter was connected through an amplifier to the coupled port of a directional coupler.…”

Section: ͓S0003-6951͑00͒01739-3͔mentioning

confidence: 99%

“…16 Following the etch, no signals for elements other than silicon and ͑adventitious͒ carbonaceous material were observed in the wide scan of an x-ray photoelectron ͑XP͒ spectrum, and no oxide was detectable in the Si 2p region. The H-terminated Si samples were then chlorinated using PCl 5 in chlorobenzene, and were subsequently treated with either CH 3 MgBr ͑to obtain methylated surfaces͒ or with C 8 H 17 MgBr ͑to obtain octylated surfaces͒, as described previously. 6 The XP spectra of the chemically modified surfaces indicated the absence of oxidized Si, as well as increases in carbon levels for the longer chain alkane, consistent with prior XP measurements of such systems.…”

Section: ͓S0003-6951͑00͒01739-3͔mentioning

confidence: 99%

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Preparation of air-stable, low recombination velocity Si(111) surfaces through alkyl termination

Royea

Juang

Lewis

2000

Applied Physics Letters

206

315

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A two-step, chlorination/alkylation procedure has been used to convert the surface Si-H bonds on NH 4 F ͑aq͒ -etched ͑111͒-oriented Si wafers into Si-alkyl bonds of the form Si-C n H 2nϩ1 (nу1). The electrical properties of such functionalized surfaces were investigated under high-level and low-level injection conditions using a contactless rf apparatus. The charge carrier recombination velocities of the alkylated surfaces were Ͻ25 cm s Ϫ1 under high-level and low-level injection conditions, implying residual surface trap densities of Ͻ3ϫ10 9 cm Ϫ2 . Although the carrier recombination velocity of hydrogen-terminated Si͑111͒ surfaces in contact with aqueous acids is Ͻ20 cm s Ϫ1 , this surface deteriorates within 30 min in an air ambient, yielding a high surface recombination velocity. In contrast, methylated Si͑111͒ surfaces exhibit low surface recombination velocities in air for more than 4 weeks. Low surface recombination velocities were also observed for Si surfaces that had been modified with longer alkyl chains.

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Section: ͓S0003-6951͑00͒01739-3͔mentioning

confidence: 99%

Section: ͓S0003-6951͑00͒01739-3͔mentioning

confidence: 99%

Preparation of air-stable, low recombination velocity Si(111) surfaces through alkyl termination

Royea

Juang

Lewis

2000

Applied Physics Letters

206

315

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“…The MHz method (method (A)) drew attention in the 1980s as a transient method [9,10] but an enormous increase in the application of this method occurred after the development of the quasi-steady-state photoconductance (QSSPC) technique [11]. The close cooperation between the manufacturer of QSSPC equipment (Sinton Consulting) and users has lead to a number of very important applications of this technique.…”

Section: Detection Of Excess Charge Carriersmentioning

confidence: 99%

The determination of charge‐carrier lifetime in silicon

Klein

Wuensch

Kunst³

2008

Physica Status Solidi (b)

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In this study, we report on a novel composite membrane system for pH‐responsive controlled release, which is composed of a porous membrane with linear grafted, positively pH‐responsive polymeric gates acting as functional valves, and a crosslinked, negatively pH‐responsive hydrogel inside the reservoir working as a functional pumping element. The proposed system features a large responsive release rate that goes effectively beyond the limit of concentration‐driven diffusion due to the pumping effects of the negatively pH‐responsive hydrogel inside the reservoir. The pH‐responsive gating membranes were prepared by grafting poly(methacrylic acid) (PMAA) linear chains onto porous polyvinylidene fluoride (PVDF) membrane substrates using a plasma‐graft pore‐filling polymerization, and the crosslinked poly(N,N‐dimethylaminoethyl methacrylate) (PDM) hydrogels were synthesized by free radical polymerization. The volume phase‐transition characteristics of PMAA and PDM were opposite. The proposed system opens new doors for pH‐responsive “smart” or “intelligent” controlled‐release systems, which are highly attractive for drug‐delivery systems, chemical carriers, sensors, and so on.

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“…The excess of minority carriers in the volume relates directly to photoconductance. Usually, this magnitude is measured by indirect techniques: by measuring the reflectivity of a microwave signal, 9 or the resonance of an inductive 2 or capacitive circuit 10 where the sample is part of the resonant circuit.…”

Section: Techniques For the Estimation Of The Lifetime And The Recombmentioning

confidence: 99%

A simulation‐based method for the comprehensive analysis of effective lifetime from photoconductance

Bueno

Recart

Jimeno

2006

Progress in Photovoltaics

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This paper presents a method for estimating recombination parameters in the volume and surface of solar cell precursors throughout the manufacturing process, taking into account several effects that are generally neglected. The technique is based on the comprehensive reconstruction of the effective lifetime assuming a set of fundamental parameters and its comparison to the experimental data obtained from the photoconductance measured under uniform generation in quasi-steady state conditions. The analysis starts from the semianalytical solution of the minority carrier profiles in the structures under test. This analysis overcomes the usual flat profile approximation and presents important advantages. It allows the asymmetry presented by the solar cell precursors to be taken into account and deals with a wide range of surface conditions: emitters, bare silicon or dielectric passivations. The model also accounts for the effect of the electric field in the volume, and implements several phenomena that are sometimes neglected but are relevant when measuring industrial solar cells precursors: the injection dependence of mobilities and recombination lifetimes, the presence of non-recombinant traps and the Depletion Region Modulation effect. The estimation technique requires uniform generation, which greatly facilitates the calculation of the carrier profiles and allows for a simple method for the auto calibration of the light absorption.

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An rf bridge technique for contactless measurement of the carrier lifetime in silicon wafers

Cited by 38 publications

References 2 publications

Preparation of air-stable, low recombination velocity Si(111) surfaces through alkyl termination

Preparation of air-stable, low recombination velocity Si(111) surfaces through alkyl termination

The determination of charge‐carrier lifetime in silicon

A simulation‐based method for the comprehensive analysis of effective lifetime from photoconductance

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