A simulation‐based method for the comprehensive analysis of effective lifetime from photoconductance

Abstract

This paper presents a method for estimating recombination parameters in the volume and surface of solar cell precursors throughout the manufacturing process, taking into account several effects that are generally neglected. The technique is based on the comprehensive reconstruction of the effective lifetime assuming a set of fundamental parameters and its comparison to the experimental data obtained from the photoconductance measured under uniform generation in quasi-steady state conditions. The analysis starts from the semianalytical solution of the minority carrier profiles in the structures under test. This analysis overcomes the usual flat profile approximation and presents important advantages. It allows the asymmetry presented by the solar cell precursors to be taken into account and deals with a wide range of surface conditions: emitters, bare silicon or dielectric passivations. The model also accounts for the effect of the electric field in the volume, and implements several phenomena that are sometimes neglected but are relevant when measuring industrial solar cells precursors: the injection dependence of mobilities and recombination lifetimes, the presence of non-recombinant traps and the Depletion Region Modulation effect. The estimation technique requires uniform generation, which greatly facilitates the calculation of the carrier profiles and allows for a simple method for the auto calibration of the light absorption.

On the determination of the emitter saturation current density from lifetime measurements of silicon devices

“…Likewise, Bueno et al . noted that the bending of the carrier density profile and the carrier density dependency of the SRH lifetime challenges the assumption that J oe can be determined from the slope of Equation . Fischer et al .…”

“…In reality, the mobility is finite, so that the carrier density cannot be strictly uniform for even a 5.0x10 15 1.0x10 16 1.5x10 16 2.0x10 16 Determination of the emitter saturation current density H. Mäckel and K. Varner non-zero recombination current in the emitter [1]. Likewise, Bueno et al noted that the bending of the carrier density profile and the carrier density dependency of the SRH lifetime challenges the assumption that J oe can be determined from the slope of Equation 1 [22]. Fischer et al simulated the inverse lifetime as a function of excess carrier density for various generation profiles [23].…”