An RC network analysis of long term Ti:LiNbO/sub 3/ bias stability

Korotky, S.K.; Veselka, J. J.

doi:10.1109/50.545788

Cited by 47 publications

(22 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…5. In this circuit model, the RC network model represents the ability of the multilayer device structure to store, conduct, and inject charges by using sets of discrete and interconnected resistor and capacitor elements [10]. Here, a stable electric field is required to support regular resistances and capacitance.…”

Section: Article In Pressmentioning

confidence: 99%

DC-drift suppression of Ti: LiNbO3 waveguide chip by minimizing the contamination in oxide buffer layer

Kim¹,

Yang²,

Kim³

et al. 2006

Journal of Crystal Growth

View full text Add to dashboard Cite

Section: Article In Pressmentioning

confidence: 99%

DC-drift suppression of Ti: LiNbO3 waveguide chip by minimizing the contamination in oxide buffer layer

Kim¹,

Yang²,

Kim³

et al. 2006

Journal of Crystal Growth

View full text Add to dashboard Cite

“…Alternatively, the bias point can be preset in manufacturing, eliminating the need for a feedback circuit, or at the very least reducing the level of applied dc voltage. The long-term dc drift behavior is best described by an RC ladder model [36]. The initial applied field is determined by capacitive voltage division through the ladder.…”

Section: Device Designmentioning

confidence: 99%

A review of lithium niobate modulators for fiber-optic communications systems

Wooten

Kissa

Yi‐Yan

et al. 2000

IEEE J. Select. Topics Quantum Electron.

1,143

542

View full text Add to dashboard Cite

Abstract-The current status of lithium-niobate external-modulator technology is reviewed with emphasis on design, fabrication, system requirements, performance, and reliability. The technology meets the performance and reliability requirements of current 2.5-, 10-, and 40-Gb/s digital communication systems, as well as CATV analog systems. The current trend in device topology is toward higher data rates and increased levels of integration. In particular, multiple high-speed modulation functions, such as 10-Gb/s return-to-zero pulse generation plus data modulation, have been achieved in a single device.

show abstract

“…As a result, modulation characteristics change. This behavior can be modeled using an electrical network approach [65]. Each layer in the device can modeled by an equivalent resistance representing the flow of charge through it, and each interface can modeled by a capacitance representing the potential for charge storage.…”

Section: ) Linbo Traveling-wave Modulatorsmentioning

confidence: 99%