Abstract:Abstract-The current status of lithium-niobate external-modulator technology is reviewed with emphasis on design, fabrication, system requirements, performance, and reliability. The technology meets the performance and reliability requirements of current 2.5-, 10-, and 40-Gb/s digital communication systems, as well as CATV analog systems. The current trend in device topology is toward higher data rates and increased levels of integration. In particular, multiple high-speed modulation functions, such as 10-Gb/s… Show more
“…In this context, devices working in the optical domain have emerged as a mature field of research 11 , and building blocks required for a functional photonic network such as detectors 12 or modulators 13 have already been integrated on Si. However, today's silicon photonics technology does not exploit the linear electro-optical (EO) properties available in oxides, which for decades fuelled the progress in telecommunication based on fibre optics to extremely high modulation speeds with well-established devices 14 . In recent work, micro-scale EO devices have been presented 15 .…”
mentioning
confidence: 99%
“…However, these approaches are both limited to relatively small EO coefficients (r LNO E30 pm V À 1 (ref. 14), r Si E1.7 pm V À 1 (ref. 18) compared with those of alternative oxides (for example, barium titanate (BTO), r BTO 41,000 pm V À 1 ) (ref.…”
The development of silicon photonics could greatly benefit from the linear electro-optical properties, absent in bulk silicon, of ferroelectric oxides, as a novel way to seamlessly connect the electrical and optical domain. Of all oxides, barium titanate exhibits one of the largest linear electro-optical coefficients, which has however not yet been explored for thin films on silicon. Here we report on the electro-optical properties of thin barium titanate films epitaxially grown on silicon substrates. We extract a large effective Pockels coefficient of r eff ¼ 148 pm V À 1 , which is five times larger than in the current standard material for electrooptical devices, lithium niobate. We also reveal the tensor nature of the electro-optical properties, as necessary for properly designing future devices, and furthermore unambiguously demonstrate the presence of ferroelectricity. The integration of electro-optical active films on silicon could pave the way towards power-efficient, ultra-compact integrated devices, such as modulators, tuning elements and bistable switches.
“…In this context, devices working in the optical domain have emerged as a mature field of research 11 , and building blocks required for a functional photonic network such as detectors 12 or modulators 13 have already been integrated on Si. However, today's silicon photonics technology does not exploit the linear electro-optical (EO) properties available in oxides, which for decades fuelled the progress in telecommunication based on fibre optics to extremely high modulation speeds with well-established devices 14 . In recent work, micro-scale EO devices have been presented 15 .…”
mentioning
confidence: 99%
“…However, these approaches are both limited to relatively small EO coefficients (r LNO E30 pm V À 1 (ref. 14), r Si E1.7 pm V À 1 (ref. 18) compared with those of alternative oxides (for example, barium titanate (BTO), r BTO 41,000 pm V À 1 ) (ref.…”
The development of silicon photonics could greatly benefit from the linear electro-optical properties, absent in bulk silicon, of ferroelectric oxides, as a novel way to seamlessly connect the electrical and optical domain. Of all oxides, barium titanate exhibits one of the largest linear electro-optical coefficients, which has however not yet been explored for thin films on silicon. Here we report on the electro-optical properties of thin barium titanate films epitaxially grown on silicon substrates. We extract a large effective Pockels coefficient of r eff ¼ 148 pm V À 1 , which is five times larger than in the current standard material for electrooptical devices, lithium niobate. We also reveal the tensor nature of the electro-optical properties, as necessary for properly designing future devices, and furthermore unambiguously demonstrate the presence of ferroelectricity. The integration of electro-optical active films on silicon could pave the way towards power-efficient, ultra-compact integrated devices, such as modulators, tuning elements and bistable switches.
“…Electro-optic components based on LiNbO 3 waveguiding structures have gained significant importance, such as electro-optic switches [1], modulators [2][3][4] and electro-optic tuned quasi-phase-matched (QPM) devices [5,6]. In these components, it is crucial to design and fabricate electrodes, which have been realized commonly by use of lithographic methods.…”
“…Due to variation of the refractive index, the phase difference arises, and depending upon the phase, signal shifts from one waveguide to another waveguide. LiNbO 3 based MZI is characterized by the attractive features of compact size, thermal stability (Wooten et al 2000), re-configurability (Jin et al 2014), integration potential (Wooten et al 2000), low latency and low power consumption (Singh et al 2012;Kumar Kumar et al 2015b). Due to which many researchers have shown their keen interest and implemented various combinational and sequential circuits using MZIs (Kumar et al , 2014a(Kumar et al , b, 2015aRaghuwanshi et al 2013Raghuwanshi et al , 2014.…”
This paper demonstrates the structure and working principle of an optical 2-bit multiplier using lithium niobate (LiNbO 3 ) based Mach-Zehnder interferometer (MZI). The powerful ability of MZI structures to switch the optical signal from one output port to the other output port has been used in the implementation of the proposed 2-bit multiplier. The paper constitutes the mathematical description of the 2-bit multiplier and thereafter compilation using MATLAB. The study is carried out by simulating the proposed device with Beam propagation method (BPM).
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