An overview of x-ray lithography for use in semiconductor device preparation

Tandon, U. S.; Pant, B. D.; Kumar, Ashok

doi:10.1016/0042-207x(91)90134-5

Cited by 6 publications

(3 citation statements)

References 30 publications

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“…7 Various lithographic techniques are available for producing patterns on different size scales. Micropatterns are commonly produced using optical lithography, whereas nanopatterns (size lower than 100 nm) 7 can be obtained by using beams of particles with smaller wavelengths, such as electrons [electronbeam lithography (EBL)], 8 extreme ultraviolet (EUV) photons, 9 X-ray photons, 10 focused ions [focused ion beam (FIB)], 11 or by alternative methods, including scanning probe lithography (SPL), 12 nanoimprint lithography (NIL) 13 or block copolymer micelle nanolithography (BCML). 14,15 The patterning of a designed structure on a resist layer is usually followed either by etching or by deposition of a material and lift-off.…”

Section: ■ Introductionmentioning

confidence: 99%

Fabrication and Microscopic and Spectroscopic Characterization of Planar, Bimetallic, Micro- and Nanopatterned Surfaces

et al. 2017

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Micropatterns and nanopatterns of gold embedded in silver and titanium embedded in gold have been prepared by combining either photolithography or electron-beam lithography with a glue-free template-stripping procedure. The obtained patterned surfaces have been topographically characterized using atomic force microscopy and scanning electron microscopy, showing a very low root-mean-square roughness (<0.5 nm), high coplanarity between the two metals (maximum height difference ≈ 2 nm), and topographical continuity at the bimetallic interface. Spectroscopic characterization using X-ray photoelectron spectroscopy (XPS), time-of-flight secondary-ion mass spectrometry (ToF-SIMS), and Auger electron spectroscopy (AES) has shown a sharp chemical contrast between the two metals at the interface for titanium patterns embedded in gold, whereas diffusion of silver into gold was observed for gold patterns embedded in silver. Surface flatness combined with a high chemical contrast makes the obtained surfaces suitable for applications involving functionalization with molecules by orthogonal adsorption chemistries or for instrumental calibration. The latter possibility has been tested by determining the image sharpness and the analyzed area on circular patterns of different sizes for each of the spectroscopic techniques applied for characterization.This is the first study in which the analyzed area has been determined using XPS and AES on a flat surface, and the first example of a method for determining the analyzed area using ToF-SIMS.

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Section: ■ Introductionmentioning

confidence: 99%

Fabrication and Microscopic and Spectroscopic Characterization of Planar, Bimetallic, Micro- and Nanopatterned Surfaces

et al. 2017

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“…Regardless of which nanomoulding lithography technique is used, a high resolution master mould is essential. Because these master nanomoulds are usually fabricated using techniques which are slow (such as serial writing) or which require expensive equipment (such as electron-beam (EB) lithography [9], focused-ion-beam (FIB) [10] writing and x-ray [11] or extreme-UV lithography [12]), the cost of the master moulds is usually high. A faster and more economical and accessible nanomould making technique will enable nanolithography to be accessible for exploratory research, low-volume prototyping and fabricating simple devices.…”

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confidence: 99%

High aspect ratio silicon nanomoulds for UV embossing fabricated by directional thermal oxidation using an oxidation mask

et al. 2007

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Nanomoulding is simple and economical but moulds with nanoscale features are usually prohibitively expensive to fabricate because nanolithographic techniques are mostly serial and time-consuming for large-area patterning. This paper describes a novel, simple and inexpensive parallel technique for fabricating nanoscale pattern moulds by silicon etching followed by thermal oxidation. The mask pattern can be made by direct photolithography or photolithography followed by metal overetching for submicron- and nanoscale features, respectively. To successfully make nanoscale channels having a post-oxidation cross-sectional shape similar to that of the original channel, an oxidation mask to promote unidirectional (specifically horizontal) oxide growth is found to be essential. A silicon nitride or metal mask layer prevents vertical oxidation of the Si directly beneath it. Without this mask, rectangular channels become smaller but are V-shaped after oxidation. By controlling the silicon etch depth and oxidation time, moulds with high aspect ratio channels having widths ranging from 500 to 50 nm and smaller can be obtained. The nanomould, when passivated with a Teflon-like layer, can be used for first-generation replication using ultraviolet (UV) nanoembossing and second-generation replication in other materials, such as polydimethylsiloxane (PDMS). The PDMS stamp, which was subsequently coated with Au, was used for transfer printing of Au electrodes with a 600 nm gap which will find applications in plastics nanoelectronics.

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“…The major challenge with the chemical syntheses is how to place and align the resultant nanowires to desired configurations or patterns. As opposed to chemical methods, nanofabrication techniques, such as electron-beam (EB) or focused-ion-beam (FIB) writing, proximal probe patterning, and X-ray or extreme-UV lithography, , suffer from high-cost, low-throughput, and large dimensions rather than placement and alignment. With the maturation of nanoimprint lithography (NIL), , features as small as sub-10 nm on molds as large as 150 mm diameter wafers can be replicated precisely and fast, and the cost of nanofabrication is significantly decreased and its throughput is greatly increased.…”

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confidence: 99%

Fabrication of Large Number Density Platinum Nanowire Arrays by Size Reduction Lithography and Nanoimprint Lithography

Kwon

et al. 2005

Nano Lett.

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Large number density Pt nanowires with typical dimensions of 12 microm x 20 nm x 5 nm (length x width x height) are fabricated on planar oxide supports. First sub-20 nm single crystalline silicon nanowires are fabricated by size reduction lithography, and then the Si nanowire pattern is replicated to produce a large number of Pt nanowires by nanoimprint lithography. The width and height of the Pt nanowires are uniform and are controlled with nanometer precision. The nanowire number density is 4 x 10(4) cm(-1), resulting in a Pt surface area larger than 2 cm(2) on a 5 x 5 cm(2) oxide substrate. Bimodal nanowires with different width have been generated by using a Pt shadow deposition technique. Using this technique, alternating 10 and 19 nm wide nanowires are produced.

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An overview of x-ray lithography for use in semiconductor device preparation

Cited by 6 publications

References 30 publications

Fabrication and Microscopic and Spectroscopic Characterization of Planar, Bimetallic, Micro- and Nanopatterned Surfaces

Fabrication and Microscopic and Spectroscopic Characterization of Planar, Bimetallic, Micro- and Nanopatterned Surfaces

High aspect ratio silicon nanomoulds for UV embossing fabricated by directional thermal oxidation using an oxidation mask

Fabrication of Large Number Density Platinum Nanowire Arrays by Size Reduction Lithography and Nanoimprint Lithography

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