1992
DOI: 10.1016/0042-207x(92)90270-7
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An overview of ion beam lithography for nanofabrication

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Cited by 22 publications
(11 citation statements)
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“…On the other hand, electrons or photons can mainly be applied for writing on soft materials (such as polymers or resists) and the corresponding feature sizes are determined by the proximity of the back‐scattered electrons or wave diffraction limits. Moreover, the lateral exposure in an ion beam is very low, thereby exposing only the correct areas and writing very narrow lines in the substrate, which makes it more capable to directly fabricate nanostructures 57…”
Section: Ions and Interactionsmentioning
confidence: 99%
See 1 more Smart Citation
“…On the other hand, electrons or photons can mainly be applied for writing on soft materials (such as polymers or resists) and the corresponding feature sizes are determined by the proximity of the back‐scattered electrons or wave diffraction limits. Moreover, the lateral exposure in an ion beam is very low, thereby exposing only the correct areas and writing very narrow lines in the substrate, which makes it more capable to directly fabricate nanostructures 57…”
Section: Ions and Interactionsmentioning
confidence: 99%
“…Most of the IPL systems use open stencil masks for pattern transformation as indicated by many investigators 5. 6, 20 In the stencil mask, patterns are etched on the metal foils.…”
Section: Projection Masks and Resistsmentioning
confidence: 99%
“…While a number of fabrication techniques are currently available, the construction of hybrid nanostructures remains a challenge both technically and practically. The high‐resolution patterning of materials below 100 nm is generally achieved using focused electron or ion beams6, 7 in lithography processes or by writing with a scanning probe 8, 9. These methods, besides being serial and hence time consuming, demanding sophistication in instrumentation, are also less ideal for handling delicate synthesized or biological materials because of the relatively severe conditions required.…”
Section: Introductionmentioning
confidence: 99%
“…The continued development of lithography technologies allows patterns to be produced with feature sizes well below 100 nm. However, the increasing cost and complexity of these lithographic techniques, e.g., deep UV and extreme UV photolithography, [1,2] soft X-ray lithography, [3] electron-beam writing, [4] and ion-beam lithography, [5] render them less suitable for exploratory research applications. Other ways of patterning structures in the $10-100 nm range may represent alternatives if they offer additional advantages in reduced production cost, increased throughput, or more flexibility regarding the material or function of the nanometric structures.…”
Section: Introductionmentioning
confidence: 99%