Abstract:These developed circuit technologies achieved the practical 1.75-s operation to change all 144 Braille dots on Braille sheet display and will be essential for the future large area electronics made with OFETs.
“…These timeconstants are much shorter than reported by Guerin et al [16] and Takamiya et al [17], and comparable with those reported by Fukuda et al [18]. They are, however, longer than reported by Kumar et al [19] for cells in which the aspect ratios of access, driver and load TFTs were optimised.…”
Section: Resultssupporting
confidence: 83%
“…switchable resistive memory [11,12], floating gate memory devices [13] and memory transistors [14]. Also reported are organic versions of dynamic [15] and static [16][17][18][19] random access memory i.e. DRAM and SRAM respectively.…”
Section: Introductionmentioning
confidence: 99%
“…An early report on organic SRAM was by Takamiya et al [17] who used a 12 x 12 array of 5-T write-only pentacene-based SRAMs to overcome the slow actuator transition rate in a Braille sheet display. The same approach was used in a later publication [18] in which faster SRAMs were fabricated from low-voltage transistors based on the more stable semiconductor dinaphtho [2,3- [20] deposited onto a thin aluminium oxide dielectric capped with a self-assembled monolayer [21].…”
ABSTRACT:An organic Static Random Access Memory (SRAM) based on p-type, six-transistor cells is demonstrated. The bottom-gate top-contact thin film transistors composing the memory were fabricated on flexible polyethylene naphthalate substrates. All metallization layers and the p-type
“…These timeconstants are much shorter than reported by Guerin et al [16] and Takamiya et al [17], and comparable with those reported by Fukuda et al [18]. They are, however, longer than reported by Kumar et al [19] for cells in which the aspect ratios of access, driver and load TFTs were optimised.…”
Section: Resultssupporting
confidence: 83%
“…switchable resistive memory [11,12], floating gate memory devices [13] and memory transistors [14]. Also reported are organic versions of dynamic [15] and static [16][17][18][19] random access memory i.e. DRAM and SRAM respectively.…”
Section: Introductionmentioning
confidence: 99%
“…An early report on organic SRAM was by Takamiya et al [17] who used a 12 x 12 array of 5-T write-only pentacene-based SRAMs to overcome the slow actuator transition rate in a Braille sheet display. The same approach was used in a later publication [18] in which faster SRAMs were fabricated from low-voltage transistors based on the more stable semiconductor dinaphtho [2,3- [20] deposited onto a thin aluminium oxide dielectric capped with a self-assembled monolayer [21].…”
ABSTRACT:An organic Static Random Access Memory (SRAM) based on p-type, six-transistor cells is demonstrated. The bottom-gate top-contact thin film transistors composing the memory were fabricated on flexible polyethylene naphthalate substrates. All metallization layers and the p-type
“…We show that by adjusting the top gate biases in dual gate inverters, the noise margin can be brought from a typical value of less than 1 to about 5 V. This drastic improvement will pave the way to the fabrication of large, complex and robust organic circuits. 13,14 We gratefully acknowledge technical assistance from T. Geuns and financial support from the Dutch Polymer Institute, project 624, and from the EC ͑Project BIODOT, NMP-TI-4-STRP 032652͒.…”
Increasing the noise margin in organic circuits using dual gate field-effect transistors Spijkman, M.; Smits, E. C. P.; Blom, P. W. M.; de Leeuw, D. M.; Saint Come, Y. Bon; Setayesh, S.; Cantatore, E.; Bon Saint Côme, Y.
“…With fl exible and stretchable batteries, [66][67][68][69][70] processors, 71 and memory [72][73][74][75][76][77] becoming available, more complex devices with good electrical properties can be achieved using only fl exible devices, enabling entire systems with mechanical fl exibility throughout.…”
Section: Integrated Circuits and Systems On Foils Designmentioning
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