An Optical and Temperature Assisted CMOS ISFET Sensor Array for Robust E. Coli Detection

Duan, Mingzheng; Zhong, Xiaopeng; Zhao, Xiaojian; El-Agnaf, Omar M. A.; Lee, Yi-Kuen; Bermak, Amine

doi:10.1109/tbcas.2021.3084540

Cited by 17 publications

(7 citation statements)

References 35 publications

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“…So far, ISFETs for several microorganisms have been developed, including bacteria, fungi, and viruses. [131,135,137] For instance, Yu and co-workers proposed that E. Coli concentration (in the range of 14-140 cfu/ml) could be Review doi.org/10.1002/elsa.202100163 screened by a 65-nm CMOS ISFET. The E. Coli concentration can be monitored based on the pH-to-time readout circuit.…”

Section: Microbesmentioning

confidence: 99%

Recent advances in ion‐sensitive field‐effect transistors for biosensing applications

Peng

Mao

et al. 2022

Electrochemical Science Adv

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Over the past decades, considerable development and improvement can be observed in the area of the ion‐sensitive field‐effect transistor (ISFET) for biosensing applications. The mature semiconductor industry provides a solid foundation for the commercialization of the ISFET‐based sensors and extensive research has been conducted to improve the performance of ISFET, with a special research focus on the materials, device structures, and readout topologies. In this review, the basic theories and mechanisms of ISFET are first introduced. Research on ISFET gate materials is reviewed, followed by a summary of typical gate structures and signal readout methods for the ISFET sensing system. After that, a variety of biosensing applications including ions, deoxyribonucleic acid, proteins, and microbes are presented. Finally, the prospects and challenges of the ISFET‐based biosensors are discussed.

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Section: Microbesmentioning

confidence: 99%

Recent advances in ion‐sensitive field‐effect transistors for biosensing applications

Peng

Mao

et al. 2022

Electrochemical Science Adv

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“…Specifications for this prototype system are summarized in Table III and comparison with state-of-the-art [4,18,[43][44][45][46][47][48] is provided in Table IV. In Table IV Our differential iSPIXEL array chip is robust to nonidealities (drift, temperature sensitivity, and other forms of noise) thus guaranteeing a high SNR and resolution to pH using a simple architecture that occupies minimal silicon area.…”

Section: Conclusion and Future Scopementioning

confidence: 99%

ISFET Pixel Array With Selectable Sensitivity and Bulk-Based Offset-Drift Nullification Capability for Reduction of Non-Ideality Effects

Prathap

Titus

2023

IEEE Sensors J.

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This paper presents a monolithic, cost-effective, label free, low power, robust 3x2 fully differential ISFET pixel array aimed at pH sensing. Each pixel is based on a differential readout architecture which eliminates need for additional non-ideality compensation circuitry. Additionally, the design offers the capability to correct for residual drift and trapped charge offset through substrate-based voltage adjustment during calibration. The design also provides a unique ability for selecting pH sensitivity according to the desired mode of operation which has not been demonstrated previously. We present experimental results obtained from the pixel array fabricated in an unmodified AMS 0.35μm CMOS process using a 3.3V power supply. Each pixel demonstrates a differential sensitivity of 61mV/pH when operated in high sensitivity mode and 25mV/pH when operated in high non-ideality rejection mode over the entire pH range, with the ability to remove the already small drift of 0.3 mV/min and any offset mismatch by adjusting the substrate voltage.

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Section: Conclusion and Future Scopementioning

confidence: 99%

ISFET Pixel Array With Selectable Sensitivity and Bulk-Based Offset-Drift Nullification Capability for Reduction of Non-Ideality Effects

Prathap¹

2023

Preprint

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<p>This paper presents a monolithic, cost-effective, label free, low power, robust 3x2 fully differential ISFET pixel array aimed at pH sensing. Each pixel is based on a differential readout architecture which eliminates need for additional non-ideality compensation circuitry. Additionally, the design offers the capability to correct for residual drift and trapped charge offset through substrate-based voltage adjustment during calibration. The design also provides a unique ability for selecting pH sensitivity according to the desired mode of operation which has not been demonstrated previously. We present experimental results obtained from the pixel array fabricated in an unmodified AMS 0.35μm CMOS process using a 3.3V power supply. Each pixel demonstrates a differential sensitivity of 61mV/pH when operated in high sensitivity mode and 25mV/pH when operated in high non-ideality rejection mode over the entire pH range, with the ability to remove the already small drift of 0.3 mV/min and any offset mismatch by adjusting the substrate voltage </p>

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An Optical and Temperature Assisted CMOS ISFET Sensor Array for Robust E. Coli Detection

Cited by 17 publications

References 35 publications

Recent advances in ion‐sensitive field‐effect transistors for biosensing applications

Recent advances in ion‐sensitive field‐effect transistors for biosensing applications

ISFET Pixel Array With Selectable Sensitivity and Bulk-Based Offset-Drift Nullification Capability for Reduction of Non-Ideality Effects

ISFET Pixel Array With Selectable Sensitivity and Bulk-Based Offset-Drift Nullification Capability for Reduction of Non-Ideality Effects

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