2022
DOI: 10.1109/tie.2021.3071702
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An $n$-PWM DC–DC Converter Modeling: Switched Systems Meets Fourier Series

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Cited by 7 publications
(5 citation statements)
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“…The dwell time in the EMI receiver can be configured by using the user interface at different values. It is important to notice that the interval of sampled values (N) discretized in the STFT (5) are much smaller than the dwell time [16]. The value of the dwell time matters to measure stable and steady signals.…”
Section: A Deterministic Modulationmentioning
confidence: 99%
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“…The dwell time in the EMI receiver can be configured by using the user interface at different values. It is important to notice that the interval of sampled values (N) discretized in the STFT (5) are much smaller than the dwell time [16]. The value of the dwell time matters to measure stable and steady signals.…”
Section: A Deterministic Modulationmentioning
confidence: 99%
“…In microgrid topologies, DC distribution systems have the potential to support high penetrations of distributed renewable energy generation systems [4]. Thus, most of the power electronic converters used in microgrid topologies are DC/DC converters [5]. These DC/ DC converters rely on the use of switching devices, such as MOS-FETs and IGBTs.…”
Section: Introductionmentioning
confidence: 99%
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“…Furthermore, the model can become very complex if the modeled converter is operating in a discontinuous conduction mode (DCM) or if the modeled converter has a high order [8]. A recent advance in power electronics state-space modeling is presented in [10]. The authors combine Fourier series and classical state-space modeling to model DC-DC with multiple driving pulse-width modulated (PWM) signals without increasing the number of state variables.…”
Section: Introductionmentioning
confidence: 99%
“…In smart grids, most of the power electronic converters used are DC/DC converters [74]. These DC/DC converters rely on the use of switching devices, such as Metal Oxide Semiconductor Field-Effect Transistors (MOSFET) and Insulated Gate Bipolar Transistors (IGBT).…”
Section: Research Objectivesmentioning
confidence: 99%