An L-band ultra-low-power-consumption monolithic low-noise amplifier

Nakatsugawa, Masashi; Yamaguchi, Yo; Muraguchi, Masahiro

doi:10.1109/22.392948

Cited by 38 publications

(6 citation statements)

References 11 publications

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“…The excellent RF performance has also manifested by dualgate D-mode FET and its performance is similar to cascode structure [6], [7]. This implicates that the cascode structure can be replaced by dual-gate structure to obtain the similar noise performance but reducing chip size.…”

Section: Introductionmentioning

confidence: 89%

Noise characteristics of dual-gate AlGaAs/InGaAs pHEMTs

Hsin

Lin

et al. 2011

2011 21st International Conference on Noise and Fluctuations

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Yue-Ming Hsin).Abstract-In this study, we compare the noise characteristics of dual-gate AlGaAs/InGaAs pHEMTs in the frequency range of 1 to 18 GHz. The studied devices including dual-gate enhancement-/enhancement-mode (E/E-mode) and enhancement-/depletionmode (E/D-mode) pHEMTs were fabricated on the same wafer by the different gate metallization. The minimum noise figure (NF min ) and associated gain (G A ) are discussed with power and linearity performance at the same bias conditions. The dual-gate E/E-and E/D-mode devices have demonstrated low noise and high gain performance, and are equivalent to the cascode configuration for compact size as compared to a cascode low noise amplifier.

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Section: Introductionmentioning

confidence: 89%

Noise characteristics of dual-gate AlGaAs/InGaAs pHEMTs

Hsin

Lin

et al. 2011

2011 21st International Conference on Noise and Fluctuations

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“…For example, the physical length of a Ȝ/4 coplanar waveguide transmission line on a GaAs substrate (relative dielectric constant: 12.6) at a frequency of 1 GHz is more than 25 mm, whereas the size of the spiral inductor necessary for the lumped-element equivalent ʌ-network or T-network is approximately 0.5 mm × 0.5 mm [8].…”

Section: Introductionmentioning

confidence: 99%

A Miniaturized Lumped-Element In-phase Power Divider with a Simple Layout

Nakayama

Hayashi

2014

2014 UKSim-AMSS 16th International Conference on Computer Modelling and Simulation

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“…Technological refinement of inductive elements for silicon ICs is still in the early stages of development. However, circuit techniques that exploit the benefits of a monolithic inductors and transformers have been manufactured in production III-V technologies for more than a decade [25,26], and many of these design principles can be applied to RF front-ends in silicon IC technologies. A narrowband low-noise amplifier and receive mixer in silicon IC technology will be used here as illustrative examples.…”

Section: Narrowband Front-end Circuits In Siliconmentioning

confidence: 99%

Next generation narrowband RF front-ends in silicon IC technology

Long¹

Proceedings of the 8th Great Lakes Symposium on VLSI (Cat. No.98TB100222)

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It is anticipated that the next generation of wireless systems will deliver voice and data services at carrier frequencies extending up to 6GHz. The front-end circuits for these radios must be aggressively designed in order to deal with issues such as analog and digital compatibility, higher linearity imposed by broadband signal processing at IF, low supply voltage to minimize size, weight and power consumption, as well as operation in multiple frequency bands. The challenges and opportunities facing the designer of these radio frequency (RF) front-end IC's in silicon will be addressed in this paper from both the technological and circuit perspectives.

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An L-band ultra-low-power-consumption monolithic low-noise amplifier

Cited by 38 publications

References 11 publications

Noise characteristics of dual-gate AlGaAs/InGaAs pHEMTs

Noise characteristics of dual-gate AlGaAs/InGaAs pHEMTs

A Miniaturized Lumped-Element In-phase Power Divider with a Simple Layout

Next generation narrowband RF front-ends in silicon IC technology

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