An isolated deep-trap phosphor for optical data storage

Wang, Wenxiang; Yang, Jiaxuan; Zou, Zehua; Li, Huihui; Wang, Yuhua

doi:10.1016/j.ceramint.2018.02.224

Cited by 31 publications

(13 citation statements)

References 18 publications

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“…Figure b and Figure S2 show that there are four kinds of cation sites in Na 2 CaGe 2 O 6 , and according to the Hume–Rothery rules (Table S1), the Tb 3+ ( r = 1.04 Å, CN = 8) ions will substitute the Ca sites ( r = 1.12 Å, CN = 8). , For charge balance, two Tb 3+ ions are expected to replace three Ca 2+ cations, leaving one negative cation vacancy, as shown in Figure b and Figure S3. The defects created in the Na 2 CaGe 2 O 6 structure can act as traps, contributing to the dynamic PL performance . The energy dispersive spectroscopy (EDS) spectrum of the sample is shown in Figure c.…”

Section: Results and Discussionmentioning

confidence: 95%

“…The position of the trap level is determined based on the thermoluminescence of the samples (details are presented in Figure S8, Figure S9, and Table S2). , At the beginning of the irradiation, because the traps are empty and the trap levels are closer to the bottom of the conduction band than the excited levels of Tb 3+ , more excited electrons are captured by traps, and few electrons participate in the luminescence process ( k c > k r ). As a result, the initial PL intensity is weak.…”

Section: Results and Discussionmentioning

confidence: 99%

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Advanced Dynamic Photoluminescent Material for Dynamic Anticounterfeiting and Encryption

Wang

Zhang

et al. 2019

ACS Appl. Mater. Interfaces

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Anticounterfeiting is a vitally important issue in modern society. At present, the most commonly used luminescent anticounterfeiting technique is based on static photoluminescence (PL), which is easily counterfeited by certain substitutes. In this work, we report for the first time a dynamic PL material, Na2CaGe2O6:Tb3+. Irradiated by a portable ultraviolet (254 nm) lamp, the PL color of the material due to Tb3+ changes from the initial red to yellow and, finally, green. The investigation reveals that the dynamic PL is due to the presence of appropriate traps and the cross-relaxation effect of Tb3+ in Na2CaGe2O6. By employing this unique dynamic PL material, high-level dynamic luminescent anticounterfeiting and encryption devices can be fabricated. The dynamic PL features of the devices are easily detected using a cheap portable lamp, and at present, it is impossible for the features to be faked by any substitutes. In a virtual military scenario, the results demonstrate that the encryption device is safe and that a spy will be detected. Accordingly, this dynamic PL material could inspire more ingenious security designs.

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Section: Results and Discussionmentioning

confidence: 95%

Section: Results and Discussionmentioning

confidence: 99%

Advanced Dynamic Photoluminescent Material for Dynamic Anticounterfeiting and Encryption

Wang

Zhang

et al. 2019

ACS Appl. Mater. Interfaces

Self Cite

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“…15). [19,20] As illustrated in the insert of Figure 1a, there are two different lattice sites of Y 3+ , distorted octahedral geometry Y1, and pentagonal bi-pyramids Y2. Considering the similar ionic radius, the doped rare-earth ions of Pr 3+ and Tb 3+ (r = 0.86−1.04 Å, CN = 6) are incorporated into Y 3+ sites (r = 0.90 Å, CN = 6) in YGO.…”

Section: Structure Solution and Luminescent Propertiesmentioning

confidence: 99%

Novel Co‐Doped Y₂GeO₅:Pr³⁺,Tb³⁺: Deep Trap Level Formation and Analog Binary Optical Storage with Submicron Information Points

Deng

Liu

Zhang

et al. 2021

Advanced Optical Materials

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Due to the limitation of 2D spatial resolution, traditional optical information storage technologies, such as optical discs, digital video discs, or Blu-ray discs, are facing increasing challenges. Recently, the fourth generation of ultracapacity optical data storage systems, like far-field super-resolution recording technology [4,5] and multiplexing technology, [6] has come into being. However, owing to the lack of suitable optical storage media, practical applications are still not possible. Herein, the study of new advanced optical materials is of great significance for application of optical information storage.As a potential optical information storage media, electron-trapping materials have attracted considerable attention, since Lindmayer disclosed a 3D optical memory system by utilizing electron-trapping materials in 1986. [7][8][9] When exposed to X-rays, ultraviolet (UV), or visible light, the data can be recorded by arresting the charge carriers in traps. Meanwhile, when stimulated by high-temperature or low-energy laser, data can be read out by releasing the captured charge carriers. Obviously, trap levels play an important role in electron-trapping materials toward optical information storage application. However, most materials with data stored in shallow traps are susceptible to thermal disturbance at room temperature, which greatly hinders its Optical information storage (OIS) is considered as one of the most promising data storage methods due to unique advantages of high security, long life, and low-energy consumption. Combination of optically stimulated luminescence of electron-trapping materials (ETMs) and advanced optical technology has been proved to be a feasible approach to break through physical limitations of traditional storage technology. However, inorganic ETMs are limited to laboratory research, and have not realized the submicron recording point of "microscopic" analog optical storage so far. In this work, an exemplary application of OIS employing inorganic ETMs by a custom-built optical system has been realized for the first time. Multidimensional triple traps are tailored through co-doping of selective rare-earth ions Tb 3+ into Pr 3+ -activated Y 2 GeO 5 . Furthermore, first principles calculations, combined with X-ray photoelectron spectroscopy and low-temperature electron spin resonance spectra, reveal the nature of trap levels. Remarkably, a {10 × 10} array of information points is automatically recorded in a bit-by-bit mode by a 515 nm femtosecond laser, then decoded by linear continuous scanning, and the emission spectrum between each two information points is detected to realize "0" and "1" in binary information. Hopefully, the present work can push forward practical application of inorganic ETMs in high-density and super-speed OIS.

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“…In 2013, Liu et al reported the superior NIR OSL and optical write-in/readout from Cr 3+ -doped LiGa 5 O 8 . In 2018, Zhuang et al, successfully demonstrated multidimensional ODS via emission intensity/wavelength multiplexing and deep trap depth engineering enabled ODS. − Taking advantage of the ODS property and the isolated deep trap, the primary applications of OSL materials in data encryption/dynamic multimode anti-counterfeiting and stable ODS were also realized. − Just this year, a further study to improve the ODS property has been reported on BaSi 2 O 5 :Eu 2+ , Nd 3+ PiG by introducing deep traps within a narrow energy distribution (0.16 eV) . To solve the signal interference in the readout caused by persistent luminescence, a quasi-layer-structure Bi 3+ -doped Ca 3 Ga 4 O 9 was prepared, realizing an anomalous large difference between persistent luminescence and OSL as well as an improved signal-to-noise ratio .…”

Section: Introductionmentioning

confidence: 99%

Tailoring Multidimensional Traps for Rewritable Multilevel Optical Data Storage

Liu¹,

Yuan²,

Jin

et al. 2019

ACS Appl. Mater. Interfaces

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In the current "big data" era, the state-of-theart optical data storage (ODS) has become a front-runner in the competing data storage technologies. As one of the most promising methods for breaking the physical limitation suffered by traditional ones, the advance of optically stimulated luminescence (OSL) based optical storage technique is now still limited by the simultaneous singlelevel write-in and readout in a same spot. In this work, to bridge the data-capacity gap, we report for the first time a novel and promising nonphysical multidimensional OSLbased ODS flexible medium for erasable multilevel optical data recording and reading. We tailor multidimensional traps with discrete, narrowly distributed energy levels through (multi-)codoping of selective trivalent rare-earth ions into Eu 2+ -activated barium orthosilicate (Ba 2 SiO 4 ). Upon UV/blue light illumination, information can be sequentially recorded in different traps assisted by thermal cleaning with an increase of storage capacity by orders of magnitude, which is addressable individually in the whole domain or bit-by-bit mode without the crosstalk by designed thermal/optical stimuli. Remarkably, good data retention and robust fatigue resistance have been achieved in recycle data recording. Insight is forged from charge carrier dynamics and interactions with traps for a universal method of data storage, and proof-of-concept applications are also demonstrated, thereby providing the way to not only rewritable multilevel ODS but also high-security encryption/decryption.

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An isolated deep-trap phosphor for optical data storage

Cited by 31 publications

References 18 publications

Advanced Dynamic Photoluminescent Material for Dynamic Anticounterfeiting and Encryption

Advanced Dynamic Photoluminescent Material for Dynamic Anticounterfeiting and Encryption

Novel Co‐Doped Y₂GeO₅:Pr³⁺,Tb³⁺: Deep Trap Level Formation and Analog Binary Optical Storage with Submicron Information Points

Tailoring Multidimensional Traps for Rewritable Multilevel Optical Data Storage

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An isolated deep-trap phosphor for optical data storage

Cited by 31 publications

References 18 publications

Advanced Dynamic Photoluminescent Material for Dynamic Anticounterfeiting and Encryption

Advanced Dynamic Photoluminescent Material for Dynamic Anticounterfeiting and Encryption

Novel Co‐Doped Y2GeO5:Pr3+,Tb3+: Deep Trap Level Formation and Analog Binary Optical Storage with Submicron Information Points

Tailoring Multidimensional Traps for Rewritable Multilevel Optical Data Storage

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Novel Co‐Doped Y₂GeO₅:Pr³⁺,Tb³⁺: Deep Trap Level Formation and Analog Binary Optical Storage with Submicron Information Points