An ion implanted bipolar silicon integrated circuit process

Sanders, I. R.

doi:10.1016/0026-2714(77)90155-x

Cited by 2 publications

(2 citation statements)

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“…The intrinsic arsenic difJusivity D~.--From Eq. [5] the value of the intrinsic diffusion coefficient Di, for arsenic was obtained which best describes the data in Fig. 6.…”

Section: Difiusion Coe~cient--equationmentioning

confidence: 68%

“…For process control, device, and circuit characterization in silicon semiconductors, an accurate knowledge of the diffusion profiles is essential. The use of ion implantation in semiconductor device manufacture makes it possible to achieve the desired impurity distribution with great accuracy (1)(2)(3)(4)(5)(6). As the implant concentration profiles of common dopants are fairly well known, knowledge of the diffusion and oxidation process parameters becomes most important.…”

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confidence: 99%

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Method for Determination of Diffusion Coefficients from Carrier Concentration Depth Profiles in Silicon

Bakowski

1980

J. Electrochem. Soc.

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A method for the determination of diffusion coefficients from carrier concentration depth profiles is presented. Carrier profiles created during diffusion from ion‐implanted sources were determined by differential conductivity measurements. The experimentally obtained distribution has been fitted for each sample by a smooth spline function approximation. Then applying the modified version of the Boltzmann transformation, diffusion coefficients of boron, phosphorus, and arsenic in silicon were determined. A full agreement between the measured and the calculated distribution was obtained when the concentration‐dependent diffusion coefficient was inserted into the numerical solution of the diffusion equation. The temperature dependence of the diffusion coefficient of boron was also calculated and the activation energy value Enormala=3.31 normaleV was obtained.

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“…The intrinsic arsenic difJusivity D~.--From Eq. [5] the value of the intrinsic diffusion coefficient Di, for arsenic was obtained which best describes the data in Fig. 6.…”

Section: Difiusion Coe~cient--equationmentioning

confidence: 68%

mentioning

confidence: 99%