An investigation on the leakage current and time dependent dielectric breakdown of ferroelectric lead–zirconate–titanate thin film capacitors for memory device applications

Chen, Jia‐lin; Chen, Hong‐ming; Lee, Joseph Ya‐min

doi:10.1063/1.117854

Cited by 33 publications

(5 citation statements)

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“…The leakage current density of 1 resolvated (10 –4 –10 –8 A·cm –2 ) measured as a function of voltage also shows a close resemblance to that of 1 , while 1 desolvated shows a much lower leakage current density of 10 –7 –10 –10 A·cm –2 (Figure b). Thus, the increased leakage current density for 1 , vis-à-vis 1 resolvated , in comparison with that of 1 desolvated illustrates the extrinsic effects caused by solvate molecules toward the polarization . This implies that resolvation restores the long-range interaction between the ionic pairs (cationic and anionic components of the framework) that are responsible for the polarization.…”

Section: Resultsmentioning

confidence: 91%

“…Thus, the increased leakage current density for 1, vis-a-vis 1 resolvated , in comparison with that of 1 desolvated illustrates the extrinsic effects caused by solvate molecules toward the polarization. 70 This implies that resolvation restores the long-range interaction between the ionic pairs (cationic and anionic components of the framework) that are responsible for the polarization. In addition, there is no significant change in leakage current of all the samples when the voltage polarity is reversed.…”

Section: Chemistry Of Materialsmentioning

confidence: 99%

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Potentially Ferroelectric {Cu^IIL₂}_n Based Two-Dimensional Framework Exhibiting High Polarization and Guest-Assisted Dielectric Anomaly

et al. 2015

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Ferroelectrics in metal−organic materials have attracted recent interest owing to their synthetic simplicity and tunable nature. Utilizing isomeric dipodal phosphoramide ligands, L 1 [PhPO(NH 4 Py) 2 ] and L 2 [PhPO(NH 2 Py) 2 ], two new Cu II L 2 derivatives, 1 ({[CuL 1 2 (H 2 O) 2 ]·(NO 3 ) 2 ·(H 2 O) 1.5 · (CH 3 OH)} ∞ ) and 2 ([CuL 2 2 ]·(NO 3 ) 2 ), were synthesized. Compound 1 crystallizes in a noncentrosymmetric polar space group Cc as a two-dimensional framework, and 2 is a centrosymmetric complex. Electrical hysteresis (P−E loop) measurements on 1 at room temperature gave the remnant (P r ) and saturation (P s ) polarization values of 27.96 and 21.79 μC· cm −2 , respectively, which are the highest among all of the known metal−organic ferroelectric materials. Also, the P r value obtained for 1 is comparable to that of barium titanate and higher than most of the organic, polymeric, and inorganic ferroelectric materials. The permittivity measurements on 1 and 2 result in high dielectric constant values of 186.3 and 53.24, respectively, at 1 Hz frequency at room temperature. Temperature-dependent permittivity measurement on 1 yields a dielectric anomaly peak at 40°C due to phase transition assisted by desolvation. The existence of phase transition is further confirmed by differential scanning calorimetry, powder X-ray diffraction, and polarized light microscopy. A comparison of the P−E loops of 1, 1 desolvated , and 1 resolvated suggest that gasification/release of the solvate molecules from the packing structure affects the polarization in 1. ■ INTRODUCTIONMaterials having ferroelectric, multiferroic, and magnetoelectric properties are of tremendous research interest owing to their application in high-technique devices. 1−7 Particularly ferroelectric materials, characterized by switchable electric polarization, are very attractive for their utility in nonvolatile computing devices, capacitors, micro-electromechanical systems (MEMS), semiconductor chips, field-effect transistors (FETs), telecommunication signal processing units, ultrasonic medical imaging devices, and nonlinear optical devices. 8−21 Traditionally, ceramic materials of the perovskite family, for example barium titanate (BTO) and lead zirconate titanate (PZT), are used as commercial ferroelectrics. 22−27 However, certain limitations such as high-temperature processing, higher molecular weight, and high content of toxic and expensive heavier metals, etc., triggered the search for alternate sources of ferroelectric materials. 28 In this effort, a range of new age materials, viz., polymers, organic−inorganic hybrids, small molecules, and liquid crystals, have been explored for ferroelectric and multiferroic applications. 29−50 Currently, ferroelectric behavior in metal−organic materials has widely been examined due to their simple synthesis, flexibility, and low-temperature fabrication techniques. 51,52 Moreover, the structural components of the metal−organic assemblies, namely, metal ions, coordinating ligands, counteranions, and the guest molec...

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Section: Resultsmentioning

confidence: 91%

Section: Chemistry Of Materialsmentioning

confidence: 99%

Potentially Ferroelectric {Cu^IIL₂}_n Based Two-Dimensional Framework Exhibiting High Polarization and Guest-Assisted Dielectric Anomaly

et al. 2015

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“…Others have reported that the breakdown performance of the PZT films depends not only on the value of the testing voltage but also on the voltage profile and the time under test, i.e. the so-called 'time-dependent breakdown' [11][12][13]. Thus, any model for this phenomenon should take into account the voltage-stress-induced evolution of the system, which eventually causes the system to break down.…”

Section: Introductionmentioning

confidence: 99%

Leakage current characteristics and dielectric breakdown of antiferroelectric Pb_0.92La_0.08Zr_0.95Ti_0.05O₃film capacitors grown on metal foils

Ma¹,

Kwon²,

Narayanan³

et al. 2008

J. Phys. D: Appl. Phys.

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We have grown crack-free antiferroelectric (AFE) Pb0.92La0.08Zr0.95Ti0.05O3 (PLZT) films on nickel foils by chemical solution deposition. To eliminate the parasitic effect caused by the formation of a low-permittivity interfacial oxide, we applied a conductive buffer layer of lanthanum nickel oxide (LNO) on the nickel foil by chemical solution deposition prior to the PLZT deposition. Use of the LNO buffer allowed high-quality film-on-foil capacitors to be prepared at high temperatures in air. With the AFE PLZT deposited on LNO-buffered Ni foils, we observed field-induced phase transformations of AFE to ferroelectric (FE). The AFE-to-FE phase transition field, EAF = 260 kV cm−1, and the reverse phase transition field, EFA = 220 kV cm−1, were measured at room temperature on a ∼1.15 µm thick PLZT film grown on LNO-buffered Ni foils. The relative permittivities of the AFE and FE states were ∼530 and ∼740, respectively, with dielectric loss <0.05 at room temperature. P–E hysteresis loop measured at room temperature confirmed the field-induced phase transition. The time-relaxation current density was investigated under various applied electric fields. The leakage current density of a 1.15 µm thick AFE PLZT film-on-foil capacitor was 5 × 10−9 A cm−2 at room temperature under 87 kV cm−1 applied field. The breakdown behaviour of the AFE PLZT film-on-foil capacitors was studied by Weibull analysis. The mean breakdown time decreased exponentially with increasing applied field. The mean breakdown time was over 610 s when a field of 1.26 MV cm−1 was applied to a 1.15 µm thick AFE PLZT film-on-foil capacitor.

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“…where I is the current, U is the voltage,  is the nonlinearity coefficient At the present time, sublinear current-voltage characteristics have been found in some polycrystalline materials [1][2][3][4][5][6][7] and several explanations of this effect were suggested [1,3,[8][9][10][11]. In particular, such behaviour has been observed in In 2 O 3 -SrO ceramics [5,6].…”

Section: Introductionmentioning

confidence: 78%

Current limiting and negative differential resistance in indium oxide based ceramics

Glot

Mazurik

Jones

et al. 2010

Journal of the European Ceramic Society

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Abstract.Indium oxide based ceramics with bismuth oxide addition were sintered in air in the temperature range 800-1300 ºC. Current-voltage characteristics of In 2 O 3 -Bi 2 O 3 ceramics sintered at different temperatures are weakly nonlinear. After an additional heat treatment in air at about 200 ºC samples sintered at a temperature within the narrow range of about 1050-1100 ºC exhibit a current-limiting effect accompanied by low-frequency current oscillations. It is shown that the observed electrical properties are controlled by the grain-boundary barriers and the heat treatment in air at 200 ºC leads to the decrease in the barrier height. Electrical measurements, scanning electron microscopy and X-ray photoelectron spectroscopy results suggest that the current-limiting effect observed in In 2 O 3 -Bi 2 O 3 may be explained in terms of a modified barrier model; the observed current-limiting effect is the result of an increase of barrier height with increasing electric field, due to additional oxygen absorption. It is found that In 2 O 3 -Bi 2 O 3 -Co 3 O 4 -Cr 2 O 3 ceramic exhibits current-voltage characteristics with negative differential resistance due to Joule micro heating.

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An investigation on the leakage current and time dependent dielectric breakdown of ferroelectric lead–zirconate–titanate thin film capacitors for memory device applications

Cited by 33 publications

References 9 publications

Potentially Ferroelectric {Cu^IIL₂}_n Based Two-Dimensional Framework Exhibiting High Polarization and Guest-Assisted Dielectric Anomaly

Potentially Ferroelectric {Cu^IIL₂}_n Based Two-Dimensional Framework Exhibiting High Polarization and Guest-Assisted Dielectric Anomaly

Leakage current characteristics and dielectric breakdown of antiferroelectric Pb_0.92La_0.08Zr_0.95Ti_0.05O₃film capacitors grown on metal foils

Current limiting and negative differential resistance in indium oxide based ceramics

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An investigation on the leakage current and time dependent dielectric breakdown of ferroelectric lead–zirconate–titanate thin film capacitors for memory device applications

Cited by 33 publications

References 9 publications

Potentially Ferroelectric {CuIIL2}n Based Two-Dimensional Framework Exhibiting High Polarization and Guest-Assisted Dielectric Anomaly

Potentially Ferroelectric {CuIIL2}n Based Two-Dimensional Framework Exhibiting High Polarization and Guest-Assisted Dielectric Anomaly

Leakage current characteristics and dielectric breakdown of antiferroelectric Pb0.92La0.08Zr0.95Ti0.05O3film capacitors grown on metal foils

Current limiting and negative differential resistance in indium oxide based ceramics

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Product

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Potentially Ferroelectric {Cu^IIL₂}_n Based Two-Dimensional Framework Exhibiting High Polarization and Guest-Assisted Dielectric Anomaly

Potentially Ferroelectric {Cu^IIL₂}_n Based Two-Dimensional Framework Exhibiting High Polarization and Guest-Assisted Dielectric Anomaly

Leakage current characteristics and dielectric breakdown of antiferroelectric Pb_0.92La_0.08Zr_0.95Ti_0.05O₃film capacitors grown on metal foils