An Investigation on the Effect of LER on Threshold Voltage and On Current of SOI, Bulk and GAA FinFETs

Khan, T. E. Ayoob; S, Sheena; Hameed, T. A. Shahul

doi:10.1109/icetietr.2018.8529135

2018 International Conference on Emerging Trends and Innovations in Engineering and Technological Research (ICETIETR) 2018

DOI: 10.1109/icetietr.2018.8529135

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An Investigation on the Effect of LER on Threshold Voltage and On Current of SOI, Bulk and GAA FinFETs

T. E. Ayoob Khan¹,

Sheena S²,

T. A. Shahul Hameed³

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2021

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High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs

et al. 2021

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Three dimensional (3-D) FinFET devices with an ultra-high Si-fin aspect ratio have been developed after integrating a 14Å nitrided gate oxide upon the silicon on insulator (SOI) wafers through an advanced CMOS logic platform. Under the lower gate voltage (VGS-VT) and the higher drain/source voltage VDS, the channel-length modulation (CLM) effect coming from the interaction impact of vertical gate field and horizontal drain field was increased and had to be revised well as the channel length L was decreased. Compared to the 28-nm MOSFETs, the interaction effect from the previous at the tested FinFETs on SOI substrate with the short-channel length L is lower than that at the 28-nm device, which means the interaction severity of both fields for nFinFETs is mitigated, but still necessary to be concerned.

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High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs

et al. 2021

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show abstract

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An Investigation on the Effect of LER on Threshold Voltage and On Current of SOI, Bulk and GAA FinFETs

Cited by 1 publication

References 5 publications

High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs

High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs

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