An investigation of the influence of low-temperature annealing treatments on the interface state density at the Si-SiO₂

Abstract

The three different interface state annealing processes widely used in MOS technology have been investigated using both quasistatic capacitance-voltage measurements and MOST characteristics. It appears that annealing in a hydrogen-nitrogen and a wet nitrogen ambient is found to produce a more rapid reduction of the interface state density. The latter process is, however, more likely to cause ionic contamination of the oxide. For the achievement of the minimum interface state density with any of the three annealing treatments a 1000 degrees C anneal in dry nitrogen after oxidation is found to be essential.

From conventional membrane electrodes to ion-sensitive field-effect transistors

“…In the previous Sections the existence of surface states was concealed for the sake of simplicity, but in practice the surface state phenomenon existing at the siliconoxide interface of all m.o.s, devices is also a reason why i.s.f.e.t.s differ so greatly from conventional membrane electrodes. The existence of surface states in fact yields an additional parameter of the device, which can actually be modulated as known from literature (YEow, 1975).…”

Effect of different types of substrate surface treatments on the graphene device performance

“…GFETs fabricated on SiO 2 with FGA show higher mobility, more symmetric I–V characteristics, as shown in Figure 2A, and better current stability as compared with GFETs on as‐grown SiO 2 without any treatment, as shown in Figure 2B. Hydrogen ambient annealing (FGA) of SiO 2 /Si eliminates the dangling bonds present the Si–SiO 2 interface and which acts as interface traps, which results in GFETs performance 11 …”

Sources of errors in quasistatic capacitance-voltage determination of the interface state density distribution in the MOS system

“…A further assumption that fluctuations of SNOW at Mullard Research Laboratories, Redhill, Surrey. surface potential in the MOS structure are negligible is also made as this can be tested for by the technique of Brews and Lopez (1973), and that was in fact found to be so in all the experimental results taken during these investigations (Yeow et al 1975).…”