An Investigation of High-Temperature (to 300 °C) Safe-Operating-Area in a High-Voltage Complementary SiGe on SOI Technology

Omprakash, Anup P.; Dao, Ha Dinh; Raghunathan, Uppili S.; Ying, Hanbin; Chakraborty, Partha Sarathi; Babcock, J.A.; Mukhopadhyay, R.; Cressler, John D.

doi:10.1109/ted.2017.2730852

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An Investigation of High-Temperature (to 300 °C) Safe-Operating-Area in a High-Voltage Complementary SiGe on SOI Technology

Cited by 5 publications

References 23 publications

Emitter-Base Profile Optimization of SiGe HBTs for Improved Thermal Stability and Frequency Response at Low-Bias Currents

Emitter-Base Profile Optimization of SiGe HBTs for Improved Thermal Stability and Frequency Response at Low-Bias Currents

Using SiGe-on-SOI HBTs to Build 300°C Capable Analog Circuits

A Compact Formulation for Avalanche Multiplication in SiGe HBTs at High Injection Levels

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