An Investigation into the Thermal Boundary Resistance Associated with the Twin Boundary in Bismuth Telluride

Uncovering Thermal and Electrical Properties of Sb2Te3/GeTe Superlattice Films

“…values indicate overall high-quality interfaces of our SLs (further detailed in Supporting Information Section 5 and in Figure S3), with any contributions most likely arising from the stacking faults 18,28 which are apparent in Figure 1b. We further note that the fitted Rimp values agree well with the molecular dynamics simulation results 29 for the thermal boundary resistances per interface (1 to 2 m 2 KGW -1 ) originating from imperfections at the three different atomic layers (Te1, Bi, and Te2) of Bi2Te3.…”

“…The errors due to the fabrication uncertainties are calculated using a Monte Carlo method. 34 Figure 2a; however, this fit clearly overestimates the thermal conductivity for smaller SL periods. By setting R imp = 1 to 2 m 2 K GW −1 , our M-SMM closely captures the experimental thermal conductivity data.…”

“…We further note that the fitted R imp values agree well with the molecular dynamics simulation results for the TBR per interface (1 to 2 m 2 K GW −1 ) due to imperfections at the different atomic layers of Bi 2 Te 3 . 34 We now turn to the electrical resistivity characterization of our SL films, which may also impact their programming in SL-PCM data storage devices. For the in-plane electrical resistivity measurements of thin films, the standard transfer length method (TLM) is usually employed, 35 as shown in Figure 3a.…”

“…Each data point is averaged from the contact resistivities of five M-TLM devices with the same etch depth. The errors due to the fabrication uncertainties are calculated using a Monte Carlo method …”

Thermoelectric properties variation in antimony telluride nanofilm using molecular dynamics

“…The thermal conductivity of the sandwich structure is still lower than the perfect structure value because the sandwich structure (Te−Sb 2 Te 3 −Te) differs from the perfect structure (Sb 2 Te 3 ). To obtain a high zT based on the dimensionless figure-of-merit zT, we need a lower thermal conductivity k. Published reports [22,23,[30][31][32][33][34][35] show that surface roughness, pore and point defects, grain size, strain, and interfacial effects contribute to phonon scattering, which affects energy transfer and reduces lattice thermal conductivity by inducing atomic configurational disorder. A similar phenomenon has been observed in various pure carbon nanomaterials and discussed influences on the thermal conductivities of the vibration density of states (VDOS) [36,37].…”