An intercomparison of absolute measurements of the oxygen and tantalum thickness of tantalum pentoxide reference materials, BCR 261, by six laboratories

Seah, M. P.; David, Daniel; Davies, John; Jackman, T. E.; Jeynes, C.; Ortega, C.; Read, P.M.; Sofield, C.J.; Weber, G.

doi:10.1016/0168-583x(88)90110-3

Cited by 40 publications

(10 citation statements)

References 29 publications

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“…Errors in the coulometry may arise if there are currents passed that do not lead to an oxide deposit. This needs extreme care with materials and sample preparation, as detailed by Amsel et al 40 -42 and by Pringle 43 and Seah et al 44 This was done here. The results from the University of Paris are shown in Table 4.…”

Section: Nuclear Reaction Analysismentioning

confidence: 95%

Critical review of the current status of thickness measurements for ultrathin SiO₂ on Si Part V: Results of a CCQM pilot study

Seah

Spencer

Bensebaa

et al. 2004

Surface & Interface Analysis

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138

159

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Results are reported from a pilot study under the Consultative Committee for Amount of Substance (CCQM) to compare measurements of and resolve any relevant measurement issues in the amount of thermal oxide on (100) and (111) orientation silicon wafer substrates in the thickness range 1.5-8 nm. As a result of the invitation to participate in this activity, 45 sets of measurements have been made in different laboratories using 10 analytical methods: medium -energy ion scattering spectrometry (MEIS), nuclear reaction analysis (NRA), RBS, elastic backscattering spectrometry (EBS), XPS, SIMS, ellipsometry, grazing -incidence x-ray reflectometry (GIXRR), neutron reflectometry and transmission electron microscopy (TEM). The measurements are made on separate sets of 10 carefully prepared samples, all of which have been characterized by a combination of ellipsometry and XPS using carefully established reference conditions and reference parameters.The results have been assessed against the National Physical Laboratory (NPL) data and all show excellent linearity. The data sets correlate with the NPL data with average root-mean-square scatters of 0.15 nm, half being better than 0.1 nm and a few at or better than 0.05 nm. Each set of data allows a relative scaling constant and a zero thickness offset to be determined. Each method has an inherent zero thickness offset between 0 nm and 1 nm and it is these offsets, measured here for the first time, that have caused many problems in the past. There are three basic classes of offset: water and carbonaceous contamination equivalent to ∼1 nm as seen by ellipsometry; adsorbed oxygen mainly from water at an equivalent thickness of 0.5 nm as seen by MEIS, NRA, RBS and possibly GIXRR; and no offset as seen by XPS using the Si 2p peaks. Each technique has a different uncertainty for the scaling constant and consistent results have been achieved. X-ray photoelectron spectroscopy has large uncertainties for the scaling constant but a high precision and critically, if used correctly, has zero offset. Thus, a combination of XPS and the other methods allows the XPS scaling constant to be determined with low uncertainty, traceable via the other methods. The XPS laboratories returning results early were invited to test a new reference procedure. All showed very significant improvements. The reference attenuation lengths thus need scaling by 0.986 ± 0.009 (at an expansion factor of 2), deduced from the data for the other methods. Several other methods have small offsets and, to the extent that these can be shown to be constant or measurable, these methods will also show low uncertainty. Recommendations are provided for parameters for XPS, MEIS, RBS and NRA to improve their accuracy.  Crown

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Section: Nuclear Reaction Analysismentioning

confidence: 95%

Critical review of the current status of thickness measurements for ultrathin SiO₂ on Si Part V: Results of a CCQM pilot study

Seah

Spencer

Bensebaa

et al. 2004

Surface & Interface Analysis

Self Cite

138

159

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“…The sputtering is conducted with 2 keV Ar C or 2 keV SF 5 C ions sputtering an area of 0.2 mm ð 0.2 mm with ion currents of 2.4 and 0.8 nA, respectively. The analysis is made using a separate ion gun with 12 keV Ga C ions rastering an area of 40 µm ð 40 µm with a pulsed current of 1 pA for the argon study and 0.1 pA for SF 5 C . The two ion guns are set at 45°to the ToF analyser axis, in opposite azimuths.…”

Section: Methodsmentioning

confidence: 99%

“…4,5 The high-resolution work cited above was part of the work to prepare the second batch. The second batch has now been depleted and a third batch has been prepared.…”

Section: Introductionmentioning

confidence: 99%

Depth resolution in sputter depth profiling-characterization of a third batch of tantalum pentoxide on tantalum certified reference material by AES and SIMS

Seah

Spencer

Gilmore

et al. 2000

Surf. Interface Anal.

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“…However, despite the previous interest of national standards institutes in the use of RBS in particular for metrology (for a Ta 2 O 5 standard material [20], for a metrology exercise on the native oxide of Si [21], and for the certified reference materials used for fluence in IBA [22] [23]), none of the labs involved (IRRM in Geel, BAM in Berlin, NPL in London) now has IBA capability. The situation is entirely different for XRF, where the PTB has been active in obtaining ISO 17025 certification (see [24] and further references therein) and where EXSA (the European X-ray Spectroscopy Association) are sponsoring a "Fundamental Parameters Initiative", supported by three National Standards Institutes (PTB in Berlin, LNE in Paris and NIST in Gaithersburg, [25]).…”

Section: Iba For Accurate (Traceable) Analysismentioning

confidence: 99%

“Total IBA” – Where are we?

Jeynes

Bailey

Bright

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

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An intercomparison of absolute measurements of the oxygen and tantalum thickness of tantalum pentoxide reference materials, BCR 261, by six laboratories

Cited by 40 publications

References 29 publications

Critical review of the current status of thickness measurements for ultrathin SiO₂ on Si Part V: Results of a CCQM pilot study

Critical review of the current status of thickness measurements for ultrathin SiO₂ on Si Part V: Results of a CCQM pilot study

Depth resolution in sputter depth profiling-characterization of a third batch of tantalum pentoxide on tantalum certified reference material by AES and SIMS

“Total IBA” – Where are we?

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An intercomparison of absolute measurements of the oxygen and tantalum thickness of tantalum pentoxide reference materials, BCR 261, by six laboratories

Cited by 40 publications

References 29 publications

Critical review of the current status of thickness measurements for ultrathin SiO2 on Si Part V: Results of a CCQM pilot study

Critical review of the current status of thickness measurements for ultrathin SiO2 on Si Part V: Results of a CCQM pilot study

Depth resolution in sputter depth profiling-characterization of a third batch of tantalum pentoxide on tantalum certified reference material by AES and SIMS

“Total IBA” – Where are we?

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Product

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About

Critical review of the current status of thickness measurements for ultrathin SiO₂ on Si Part V: Results of a CCQM pilot study

Critical review of the current status of thickness measurements for ultrathin SiO₂ on Si Part V: Results of a CCQM pilot study