An integrated VCSEL driver for 10Gb ethernet in 0.13/spl mu/m CMOS

Rabii, S.; Acharya, N.; Chau, P.S.; Dao, Joseph; Feldman, Asaf; Liaw, H. W.; Liu, Dean; Loinaz, M.J.; Luschas, M.; Salleh, Azahari; Sheth, S.; Sidiropoulos, S.; Stark, D.; Verma, Sanjay Kumar

doi:10.1109/isscc.2006.1696134

Cited by 6 publications

(4 citation statements)

References 2 publications

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“…However, if so, the passive inductors will increase the chip area greatly. This article employs the structure of two-stage cascaded differential amplifiers in the preamplifier stage, which can expand the bandwidth without increasing the chip area [8]. The circuit of preamplifier stage is shown in Figure 4.…”

Section: Preamplifier Stagementioning

confidence: 99%

“…To meet this need, much research work has been investigated and various design methods have been proposed [1][2][3][4][5][6][7][8]. Among them, three categories of methods are very popular.…”

Section: Introductionmentioning

confidence: 99%

“…By controlling impedance and length ratio of SIRs, the desired operating frequencies can be achieved. The third method is to employ two individual circuits as parallel configurations to generate dualband features [7,8]. However, most of the aforementioned filters are focused on their central frequencies of two passbands, while they can hardly regulate bandwidths of dual passbands simultaneously to fit the required specifications of each band.…”

Section: Introductionmentioning

confidence: 99%

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A four‐channel parallel 40 Gb/s laser diode voltage driver in 0.18‐μm CMOS

Chen

Dawei

et al. 2013

Micro & Optical Tech Letters

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frequency of 8 GHz, and these values are 1.27 and 16.8 dB with the same bandwidth at a TX center frequency of 10 GHz, respectively. The suggested narrow-bandwidth duplexer with a MNG metamaterial T-SRR can be fabricated with MEMS (microelectro mechanical systems) and IPD (Integrated Passive Device) techniques due to its entirely planar structure. It can also be applied to X-band radar in military satellite communication systems.

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Section: Preamplifier Stagementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A four‐channel parallel 40 Gb/s laser diode voltage driver in 0.18‐μm CMOS

Chen

Dawei

et al. 2013

Micro & Optical Tech Letters

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“…IBIAS always flows through VCSEL to guarantee that IBIAS always exceeds threshold current for the stimulated emission. IMOD flows through VCSEL according to the incident voltage signal [5].…”

Section: Design Detailsmentioning

confidence: 99%

A 12.5-Gb/s Optical Transmitter Using an Auto-power and -modulation Control

Oh¹,

Park²,

Im³

et al. 2009

Journal of the Optical Society of Korea

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In this paper, a 12.5-Gb/s optical transmitter is implemented using 0.13-μm CMOS technology. The optical transmitter that we constructed compensates temperature effects of VCSEL (Vertical cavity surface emitting laser) using auto-power control (APC) and auto-modulation control (AMC). An external monitoring photodiode (MPD) detects optical power and modulation. The proposed APC and AMC demonstrate 5~20-mA of bias-current control and 5~20-mA of modulation-current control, respectively. To enhance the bandwidth of the optical transmitter, an active feedback amplifier with negative capacitance compensation is exploited. The whole chip consumes only 140.4-mW of DC power at a single 1.8-V supply under the maximum modulation and bias currents, and occupies the area of 1280-μm by 330-μm excluding bonding pads.

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